IRLS3034-7PPbF Applications HEXFET Power MOSFET DC Motor Drive D High Efficiency Synchronous Rectification in SMPS V 40V DSS Uninterruptible Power Supply R typ. 1.0m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits max. 1.4m G I 380A D (Silicon Limited) Benefits I Optimized for Logic Level Drive 240A S D (Package Limited) Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 380 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 240 D C GS I Pulsed Drain Current 1540 DM P T = 25C 380 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 1.3 V/ns T Operating Junction and -55 to + 175 J T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 250 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R C/W JC Junction-to-Case 0.40 R Junction-to-Ambient 40 JA www.irf.com 1 1/12/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.0 1.4 V = 10V, I = 200A DS(on) m GS D 1.2 1.7 V = 4.5V, I = 180A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.9 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 370 S V = 10V, I = 220A DS D Q Total Gate Charge 120 180 nC I = 170A g D Q Gate-to-Source Charge 32 V =20V gs DS Q Gate-to-Drain Mille) Charge 71 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 49 I = 170A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 71 ns V = 26V d(on) DD t Rise Time 590 I = 220A r D t Turn-Off Delay Time 94 R = 2.7 d(off) G t Fall Time 200 V = 4.5V f GS C Input Capacitance 10990 pF V = 0V iss GS C Output Capacitance 2030 V = 40V oss DS C Reverse Transfer Capacitance 1100 = 1.0MHz, See Fig. 5 rss C eff. (ER) 2520 V = 0V, V = 0V to 32V , See Fig. 11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 3060 V = 0V, V = 0V to 32V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 380 (Body Diode) showing the G I Pulsed Source Current 1540 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 200A, V = 0V SD J S GS t T = 25C V = 34V, Reverse Recovery Time 46 ns rr J R T = 125C I = 220A 49 J F di/dt = 100A/s Q Reverse Recovery Charge 100 nC T = 25C rr J T = 125C 110 J I T = 25C Reverse Recovery Current 3.7 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 220A, di/dt 1240A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 240A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.010mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25 , I = 220A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value . % & JC 2 www.irf.com