IRLS3036-7PPbF HEXFET Power MOSFET Applications D V 60V DSS DC Motor Drive High Efficiency Synchronous Rectification in SMPS R typ. 1.5m DS(on) Uninterruptible Power Supply max. 1.9m High Speed Power Switching G I 300A D (Silicon Limited) Hard Switched and High Frequency Circuits I 240A S D (Package Limited) Benefits Optimized for Logic Level Drive Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 300 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 210 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I 1000 Pulsed Drain Current DM P T = 25C 380 Maximum Power Dissipation W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 16 V GS Peak Diode Recovery 8.1 dv/dt V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Single Pulse Avalanche Energy E 300 mJ AS (Thermally limited) Avalanche Current I A AR See Fig. 14, 15, 22a, 22b Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 C/W JC R Junction-to-Ambient (PCB Mount, steady state) 40 JA www.irf.com 1 10/28/10 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.059 V/C Reference to 25C, I = 5mA (BR)DSS J D = 10V, I = 180A 1.5 1.9 V GS D R Static Drain-to-Source On-Resistance m DS(on) 1.7 2.2 V = 4.5V, I = 150A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 = 16V V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 1.9 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 390 S V = 10V, I = 180A DS D Q Total Gate Charge 110 160 I = 180A g D Q Gate-to-Source Charge 33 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 53 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 57 I = 180A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 81 V = 39V d(on) DD t Rise Time 540 I = 180A r D ns t Turn-Off Delay Time 89 R = 2.1 d(off) G t Fall Time 170 V = 4.5V f GS C Input Capacitance 11270 V = 0V iss GS C Output Capacitance 1025 V = 50V oss DS C Reverse Transfer Capacitance 520 pF = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 1460 V = 0V, V = 0V to 48V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1630 V = 0V, V = 0V to 48V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 300 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1000 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 180A, V = 0V SD J S GS t Reverse Recovery Time 57 T = 25C V = 51V, rr J R ns 60 T = 125C I = 180A J F di/dt = 100A/ s Q Reverse Recovery Charge 140 T = 25C rr J nC T = 125C 160 J I T = 25C Reverse Recovery Current 4.6 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time as temperature Bond wire current limit is 240A. Note that current oss limitation arising from heating of the device leds may occur with C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For Limited by T , starting T = 25C, L = 0.018mH Jmax J recommended footprint and soldering techniquea refer to applocation note AN- 994 echniques refer to application note AN-994. R = 25, I = 180A, V =10V. Part not recommended for use GS G AS above this value . JC I 180A, di/dt 1070A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com