PD - 96224 IRLR3636PbF IRLU3636PbF Applications DC Motor Drive HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply D V 60V DSS High Speed Power Switching R typ. 5.4m Hard Switched and High Frequency Circuits DS(on) max. 6.8m G I 99A D (Silicon Limited) Benefits I 50A S Optimized for Logic Level Drive D (Package Limited) Very Low R at 4.5V V DS(ON) GS Superior R*Q at 4.5V V GS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free D-Pak I-Pak IRLR3636PbF IRLU3636PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 99 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 70 A D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 D C GS I Pulsed Drain Current 396 DM P T = 25C 143 W D C Maximum Power Dissipation Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 16 V GS 22 dv/dt Peak Diode Recovery V/ns T Operating Junction and J -55 to + 175 T C STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 170 mJ AS (Thermally limited) Avalanche Current I A AR See Fig.14, 15, 22a, 22b Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.05 R Junction-to-Ambient (PCB Mount) 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 02/06/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D 5.4 6.8 V = 10V, I = 50A GS D R Static Drain-to-Source On-Resistance m DS(on) 6.6 8.3 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 60V, V = 0V DSS DS GS A 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS R Internal Gate Resistance 0.6 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 31 S V = 25V, I = 50A DS D Q Total Gate Charge 33 49 I = 50A g D Q Gate-to-Source Charge 11 V = 30V gs DS nC Q Gate-to-Drain Mille) Charge 15 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q ) 18 I = 50A, V =0V, V = 4.5V sync g gd D DS GS t Turn-On Delay Time 45 V = 39V d(on) DD t Rise Time 216 I = 50A r D ns t Turn-Off Delay Time 43 R = 7.5 d(off) G t Fall Time 69 V = 4.5V f GS C Input Capacitance 3779 V = 0V iss GS C Output Capacitance 332 V = 50V oss DS C Reverse Transfer Capacitance 163 pF = 1.0MHz rss C eff. (ER) 437 V = 0V, V = 0V to 48V ,See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 636 V = 0V, V = 0V to 48V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 99 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 396 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 27 T = 25C V = 51V, rr J R ns T = 125C I = 50A 32 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 31 rr J nC 43 T = 125C J I T = 25C Reverse Recovery Current 2.1 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calcuted continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time temperature Bond wire current limit is 50A. Note that current oss limitation arising from heating of the device leds may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For Limited by T , starting T = 25C, L = 0.136 mH Jmax J recommended footprint and soldering techniquea refer to applocation R = 25, I = 50A, V =10V. Part not recommended for use note AN- 994 echniques refer to application note AN-994. G AS GS above this value . I 50A, di/dt 1109 A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com