PD - 95956A IRLR3705ZPbF IRLU3705ZPbF Features Logic Level Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V = 55V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free R = 8.0m DS(on) G Description I = 42A D This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRLR3705ZPbF IRLU3705ZPbF Absolute Maximum Ratings Parameter Max. Units (Silicon Limited) I T = 25C Continuous Drain Current, V 10V 89 GS D C Continuous Drain Current, V 10V I T = 100C 63 A D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) GS 42 D C Pulsed Drain Current I 360 DM P T = 25C Power Dissipation 130 W D C Linear Derating Factor 0.88 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 110 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 190 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.14 JC R Junction-to-Ambient (PCB mount) 40 C/W JA Junction-to-Ambient R 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 6.5 8.0 m V = 10V, I = 42A DS(on) GS D 11 V = 5.0V, I = 34A GS D 12 V = 4.5V, I = 21A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 89 S V = 25V, I = 42A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 16V GSS GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 44 66 I = 42A g D Q Gate-to-Source Charge 13 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 22 V = 5.0V gd GS t Turn-On Delay Time 17 V = 28V d(on) DD t Rise Time 150 I = 42A r D t Turn-Off Delay Time 33 ns R = 4.2 d(off) G t Fall Time 70 V = 5.0V f GS D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C Input Capacitance 2900 V = 0V iss GS C Output Capacitance 420 V = 25V oss DS C Reverse Transfer Capacitance 230 pF = 1.0MHz rss C Output Capacitance 1550 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 320 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 500 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 42 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 360 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 42A, V = 0V SD J S GS t Reverse Recovery Time 21 42 ns T = 25C, I = 42A, V = 28V rr J F DD Q Reverse Recovery Charge 14 28 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com