IRLR8713PbF IRLU8713PbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC 4.8m 25V 17.4nC Converters with Synchronous Rectification for Telecom and Industrial Use D D Benefits Very Low R at 4.5V V DS(on) GS S Ultra-Low Gate Impedance S D D G Fully Characterized Avalanche Voltage G and Current D-Pak I-Pak Lead-Free IRLR8713PbF IRLU8713PbF GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 100 GS D C Continuous Drain Current, V 10V 72 I T = 100C A C GS D Pulsed Drain Current I 410 DM Maximum Power Dissipation P T = 25C 81 W C D Maximum Power Dissipation P T = 100C 40 D C Linear Derating Factor 0.54 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.86 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA Junction-to-Ambient R 110 JA Notes through are on page 10 www.irf.com 1 12/7/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 16 mV/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 3.8 4.8 V = 10V, I = 21A DS(on) GS D 5.0 6.3 V = 4.5V, I = 17A GS D V Gate Threshold Voltage 1.35 1.85 2.35 V V = V , I = 50A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 20V, V = 0V DSS DS GS = 20V, V = 0V, T = 125C 150 V DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 79 S V = 13V, I = 17A DS D Q Total Gate Charge 17.4 26 g Q Pre-Vth Gate-to-Source Charge 4.0 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 2.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 5.8 I = 17A gd D Q Gate Charge Overdrive 5.4 See Fig.16 godr Q Switch Charge (Q + Q ) 8.0 sw gs2 gd Q Output Charge 8.6 nC V = 10V, V = 0V oss DS GS R Gate Resistance 0.9 1.6 G t Turn-On Delay Time 14 V = 13V, V = 4.5V d(on) DD GS t Rise Time 24 I = 17A r D t Turn-Off Delay Time 12 ns Clamped Inductive Load d(off) t Fall Time 5.9 f C Input Capacitance 2240 V = 0V iss GS C Output Capacitance 580 pF V = 13V oss DS C Reverse Transfer Capacitance 270 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 190 mJ AS Avalanche Current I 17 A AR Repetitive Avalanche Energy E 8.1 mJ AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units D 100 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 410 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 17A, V = 13V rr J F DD Q Reverse Recovery Charge 15 23 nC di/dt = 300A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com