ISZ0901NLS MOSFET TM TSDSON-8 FL OptiMOS Power-MOSFET, 25 V (enlarged source interconnection) Features Optimized for Charger applications Very Low FOMQOSS for High Frequency SMPS Low FOM for High Frequency SMPS SW Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R V =4.5 V DS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 S1 8D Product validation S2 7D Qualified according to JEDEC Standard S3 6D G4 5D Table 1 Key Performance Parameters Parameter Value Unit V DS 25 V R V =10 V 6 m DS(on),max, GS R V =4.5 V 8.1 m DS(on),max, GS I 40 A D Type / Ordering Code Package Marking Related Links ISZ0901NLS PG-TSDSON-8 FL 0901NL - Final Data Sheet 1 Rev. 2.0, 2019-12-13TM OptiMOS Power-MOSFET, 25 V ISZ0901NLS Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.0, 2019-12-13