PD- 90335G IRF330 JANTX2N6760 JANTXV2N6760 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED REF: MIL-PRF-19500/542 HEXFET TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BV RDS(on) I DSS D IRF330 400V 5.5A 1.00 TO-3 (TO-204AA) Description Features HEXFET MOSFET technology is the key to IR Hirel advanced Repetitive Avalanche Ratings line of power MOSFET transistors. The efficient geometry and Dynamic dv/dt Rating unique processing of this latest State of the Art design Hermetically Sealed achieves: very low on-state resistance combined with high trans Simple Drive Requirements conductance superior reverse energy and diode recovery dv/dt ESD Rating: Class 1C per MIL-STD-750, capability. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 5.5 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 3.5 D2 GS C I T = 25C Pulsed Drain Current 22 DM C P T = 25C Maximum Power Dissipation 75 W D C Linear Derating Factor 0.60 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 1.7 mJ AS I Avalanche Current 5.5 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery 4.0 V/ns T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (Typical) g For footnotes refer to the page 2. 1 2019-07-08 International Rectifier HiRel Products, Inc. IRF330 JANTX2N6760/JANTXV2N6760 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV /T DSS J Breakdown Voltage Temp. Coefficient 0.46 V/C Reference to 25C, I = 1.0mA D R DS(on) 1.00 V = 10V, I = 3.5A GS D2 Static Drain-to-Source On-Resistance 1.22 V = 10V, I = 5.5A GS D1 V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D I 25 V = 320V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 320V,V = 0V,T =125C DS GS J I = 20V Gate-to-Source Leakage Forward 100 V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 17 39 I = 5.5A G D1 Q Gate-to-Source Charge 2.0 6.0 V = 200V nC GS DS V = 10V Q Gate-to-Drain (Miller) Charge 8.0 20 GD GS t Turn-On Delay Time 30 V = 200V d(on) DD tr Rise Time 40 I = 5.5A D1 ns t Turn-Off Delay Time 80 R = 7.5 d(off) G t Fall Time 35 V = 10V f GS Measured from Drain lead (6mm / 0.25 in from package) to Source Ls +L Total Inductance 6.1 nH D lead (6mm/ 0.25 in from package) C Input Capacitance 620 V = 0V iss GS C Output Capacitance 200 pF V = 25V oss DS C Reverse Transfer Capacitance 75 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 5.5 S A I Pulsed Source Current (Body Diode) 22 SM V Diode Forward Voltage 1.4 V T = 25C,I = 5.5A, V = 0V SD J S GS t Reverse Recovery Time 700 ns T = 25C,I = 5.5A,V 30V rr J F DD Q Reverse Recovery Charge 6.2 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units R Junction-to-Case 1.67 JC C/W Junction-to-Ambient (Typical socket mount) R JA 30 Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L= 0.11mH, Peak I = 5.5A,V = 10V. DD J L GS I 5.5A, di/dt 90A/s, V 400V, T 150C. Suggested R =7.5 SD DD J G Pulse width 300 s Duty Cycle 2% 2 2019-07-08 International Rectifier HiRel Products, Inc.