2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low R DS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS T = 25 C C PART NUMBER V Volts R I Amps DS, DS(on) D, 2N6764 100 .055 38 2N6766 200 .085 30 2N6768 400 .30 14 2N6770 500 .40 12 SCHEMATIC MECHANICAL OUTLINE 1.197 1.53 REF. 1.177 0.675 0.875 0.440 0.655 0.188 R. MAX. 0.420 MAX. 0.135 MAX. 0.450 0.250 0.312 Pin Connection MIN. Pin 1: Drain Pin 2: Source 0.525 R. 0.043 0.225 0.161 MAX. Pin 3: Gate SEATING 0.038 0.205 0.151 PLANE 2 PLCS. Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above except the lead diameter is 0.058 min to 0.063 max. 7 03 R02N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 ABSOLUTE MAXIMUM RATINGS(T = 25C unless otherwise noted C Parameter JANTXV, JANTX, 2N6764 Units I V = 10V, T = 25C Continuous Drain Current 38 A D GS C I V = 10V, T = 100C Continuous Drain Current 24 A D GS C 1 I Pulsed Drain Current 152 A DM P T = 25C Maximum Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-Source Voltage 20 V GS 2 4 E Single Pulse Avalanche Energy 150 mJ AS 1 4 I Avalanche Current 38 A AR TJ Operating Junction -55 to 150 C TSTG Storage Temperature Range Lead Temperature 300(.06 from case for 10 sec) C ELECTRICAL CHARACTERISTICS T = 25C (Unless Otherwise Specified) J Parameter Min. Typ. Max. Units Test Conditions BV Drain-Source 100 V V = 0V, I =1.0 mA, DSS GS D Breakdown Voltage 3 R Static Drain-to-Source ------ 0.055 V = 10 V, I = 24 A DS(on) GS D 3 On-State Resistance ------ 0.065 V = 10 V, I = 38 A GS D V Gate Threshold Voltage 2.0 --- 4.0 V V = V , I = 250 A GS(th) DS GS D I Zero Gate Voltage Drain ------ 25 V = 80 V, V = 0V DSS DS GS A Current ------ 250 V = 80 V, V = 0V, T = 125C DS GS J I Gate -to-Source Leakage Forward ------ 100 nA V = 20 V GSS GS I Gate -to-Source Leakage Reverse ------ -100 nA V = -20 V GSS GS Q On-state Gate Charge 50 --- 125 nC V = 10 V, I = 38A G(on) GS D Q Gate-to-Source Charge 8 ---22 nC V = 50 V GS DS Q Gate-to-Drain (Miller) Charge 25 --- 65 nC See note 4 Gd t Turn-On Delay Time ------35 ns V = 50 V, I = 38A, R =2.35 D(on) DD D G t Rise Time ------ 190 ns See note 4 r t Turn-Off Delay Time ------ 170 ns D(off) t Fall Time ------ 130 ns r Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions 3 V Diode Forward Voltage ------ 1.9 V T = 25C, I = 38A V, = 0 V SD J S GS 3 t Reverse Recovery Time ------ 500 ns T = 25C, I = 38A,di/dt<100A/s trr J F Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions R Junction-to-Case ------ 0.83 Mounting surface flat, thJC R Case-to-sink --- 0.21 --- C/W smooth, and greased thCS R Junction-to-Ambient ------ 48 Typical socket mount thJA 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. V = 50V, Starting T = 25C, L = 100 H +10%, R = 25 , Peak I = 38A J G L DD 3. Pulse width <300 s Duty Cycle <2% 4. See MIL-S-19500/543 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246