PD- 90549E
IRF9130
JANTX2N6804
JANTXV2N68064
100V, P-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
REF: MIL-PRF-19500/562
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA)
Product Summary
Part Number BV RDS(on) I
DSS D
IRF9130 -100V -11A
TO-3 (TO-204AA)
Description Features
HEXFET MOSFET technology is the key to IR Hirel advanced
Repetitive Avalanche Ratings
line of power MOSFET transistors. The efficient geometry and
Dynamic dv/dt Rating
unique processing of this latest State of the Art design
Hermetically Sealed
achieves: very low on-state resistance combined with high trans
Simple Drive Requirements
conductance; superior reverse energy and diode recovery dv/dt
ESD Rating: Class 1C per MIL-STD-750,
capability.
Method 1020
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
Absolute Maximum Ratings
Symbol Value
Parameter Units
I @ V = -10V, T = 25C Continuous Drain Current -11
D1 GS C
A
I @ V = -10V, T = 100C Continuous Drain Current -7.0
D2 GS C
I @T = 25C Pulsed Drain Current -44
DM C
P @T = 25C Maximum Power Dissipation 75 W
D C
Linear Derating Factor 0.60 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 207 mJ
AS
I Avalanche Current -11 A
AR
E Repetitive Avalanche Energy 7.5 mJ
AR
dv/dt Peak Diode Recovery -5.5 V/ns
T Operating Junction and
J
-55 to + 150
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (Typical) g
For footnotes refer to the page 2.
1 2019-07-29
International Rectifier HiRel Products, Inc. IRF9130
JANTX2N6804/JANTXV2N6804
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA
DSS GS D
BV /T
DSS J Breakdown Voltage Temp. Coefficient -0.087 V/C Reference to 25C, I = -1.0mA
D
R
DS(on) 0.30 V = -10V, I = -7.0A
GS D2
Static Drain-to-Source On-Resistance
0.36 V = -10V, I = -11A
GS D1
V
GS(th) Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
DS GS D
I -25 V = -80V, V = 0V
DSS DS GS
Zero Gate Voltage Drain Current A
-250 V = -80V,V = 0V,T =125C
DS GS J
I = -20V
Gate-to-Source Leakage Forward -100 V
GSS GS
nA
Gate-to-Source Leakage Reverse 100 V = 20V
GS
Q Total Gate Charge 29 I = -11A
G D1
Q Gate-to-Source Charge 7.1 nC V = -50V
GS DS
Q Gate-to-Drain (Miller) Charge 21 V = -10V
GD GS
t Turn-On Delay Time 60 V = -50V
d(on) DD
tr Rise Time 140 I = -11A
D1
ns
t Turn-Off Delay Time 140 R = 7.5
d(off)
G
V = -10V
t Fall Time 140
f GS
Measured from Drain lead (6mm /
0.25 in from package) to Source
Ls +L Total Inductance 6.1 nH
D
lead (6mm/ 0.25 in from package)
C Input Capacitance 860 V = 0V
iss GS
C Output Capacitance 350 pF V = -25V
oss DS
= 1.0MHz
C Reverse Transfer Capacitance 125
rss
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter Min. Typ. Max. Units Test Conditions
I Continuous Source Current (Body Diode) -11
S
A
I Pulsed Source Current (Body Diode) -44
SM
V Diode Forward Voltage -4.7 V T = 25C,I = -11A, V = 0V
SD J S GS
t Reverse Recovery Time 250 ns T = 25C,I = -11A,V 50V
rr
J F DD
Q Reverse Recovery Charge 3.0 C di/dt = -100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
R Junction-to-Case
1.67
JC
C/W
Junction-to-Ambient (Typical socket mount)
R
JA 30
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V = -25V, starting T = 25C, L= 3.4mH, Peak I = -11A,V = -10V.
DD J L GS
I -11A, di/dt -140A/s, V -100V, T 150C. Suggested RG =7.5
SD DD J
Pulse width 300 s; Duty Cycle 2%
2 2019-07-29
International Rectifier HiRel Products, Inc.