PD - 90555E IRFM240 JANTX2N7219 JANTXV2N7219 POWER MOSFET REF:MIL-PRF-19500/596 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 18A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as Features: switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and Simple Drive Requirements virtually any application where high reliability is required. Ease of Paralleling The HEXFET transistors totally isolated package eliminates Hermetically Sealed the need for additional isolating material between the device Electrically Isolated and the heatsink. This improves thermal efficiency and Dynamic dv/dt Rating reduces drain capacitance. Light-weight Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 18 D GS C A I V = 10V, T = 100C Continuous Drain Current 11 D GS C I Pulsed Drain Current 72 DM P T = 25C Max. Power Dissipation 125 W D C Linear Derating Factor 1.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 450 mJ AS I Avalanche Current 18 A AR E Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 9.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFM240 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.29 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.18 V = 10V, I = 11A DS(on) GS D Resistance 0.25 V = 10V, I = 18A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.1 S V > 15V, I = 11A fs DS DS I Zero Gate Voltage Drain Current 25 V = 160V ,V =0V DSS DS GS A 250 V = 160V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 60 V =10V, I = 18A g GS D Q Gate-to-Source Charge 14.6 nC V = 100V gs DS Q Gate-to-Drain (Miller) Charge 37.6 gd t Turn-On Delay Time 20 V = 100V, I = 18A, d(on) DD D t Rise Time 105 V =10V, R = 9.1 r GS G ns t Turn-Off Delay Time 58 d(off) t Fall Time 67 f L + L Total Inductance 4.0 S D Measured from drain lead (6mm/ nH 0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 1300 V = 0V, V = 25V iss GS DS C Output Capacitance 400 pF f = 1.0MHz oss C Reverse Transfer Capacitance 130 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 18 S A I Pulse Source Current (Body Diode) 72 SM V Diode Forward Voltage 1.5 V T = 25C, I = 18A, V = 0V j S GS SD t Reverse Recovery Time 500 ns T = 25C, I = 18A, di/dt 100A/s j rr F Q Reverse Recovery Charge 5.3 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.0 thJC R Case-to-sink 0.21 C/W thJS R Junction-to-Ambient 48 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 2 www.irf.com