PD-91551D IRFN350 JANTX2N7227U JANTXV2N7227U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 400V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN350 0.315 14A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resistance combined with high transconductance. HEXFET transistors also feature all of the well- SMD-1 established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well- Features: suited for applications such as switching power supplies, Simple Drive Requirements motor controls, inverters, choppers, audio amplifiers, Ease of Paralleling high energy pulse circuits, and virtually any application Hermetically Sealed where high reliability is required. The HEXFET Electrically Isolated transistors totally isolated package eliminates the need Surface Mount for additional isolating material between the device and the heatsink. This improves thermal efficiency and Dynamic dv/dt Rating Light-weight reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 14 D GS C A I V = 10V, T = 100C Continuous Drain Current 9.0 D GS C I Pulsed Drain Current 56 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 700 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Pckg. Mounting Surface Temperature 300 (for 5 sec) Weight 2.6 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFN350, JANTX2N7227U, JANTXV2N7227U Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.315 V = 10V, I = 9.0A DS(on) GS D Resistance 0.415 V = 10V, I = 14A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.0 S V > 15V, I = 9.0A fs DS DS I Zero Gate Voltage Drain Current 25 V = 320V ,V = 0V DSS DS GS A 250 V = 320V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 110 V =10V, I = 14A g GS D Q Gate-to-Source Charge 18 nC V = 200V gs DS Q Gate-to-Drain (Miller) Charge 65 gd t Turn-On Delay Time 35 V = 200V, I = 14A, d(on) DD D t Rise Time 190 V =10V, R = 2.35 r GS G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f L + L Total Inductance 4.0 Measured from the center of drain S D nH pad to center of source pad. C Input Capacitance 2600 V = 0V, V = 25V iss GS DS C Output Capacitance 680 pF f = 1.0MHz oss C Reverse Transfer Capacitance 250 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 14 S A I Pulse Source Current (Body Diode) 56 SM V Diode Forward Voltage 1.7 V T = 25C, I = 14A, V = 0V j S GS SD t Reverse Recovery Time 1200 ns T = 25C, I = 14A, di/dt 100A/s j rr F Q Reverse Recovery Charge 11 C V 30V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 0.83 thJC C/W R Junction-to-PC board 3.0 Soldered to a copper-clad PC board thJ-PCB Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com