2N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES Repetitive Avalanche Rating Isolated and Hermetically Sealed Low R DS(on) Ease of Paralleling Ceramic Feedthroughs Qualified to MIL-PRF-19500 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS T = 25 C C PART NUMBER V Volts R I Amps DS, DS(on) D, 2N7224 100 .070 34 2N7225 200 .100 27.4 2N7227 400 .315 14 2N7228 500 .415 12 SCHEMATIC MECHANICAL OUTLINE .545 .050 .144 DIA535 .040 Pin Connection Pin 1: Drain Pin 2: Source .800 .685 .790 .550 .665 Pin 3: Gate .530 12 3 .550 .005 .510 .045 .150 TYP035 .260 .150 TYP249 3.1 - 1 4 11 R02N7224, JANTX2N7224, JANTXV2N7224 2N7227, JANTX2N7227, JANTXV2N7227 2N7225, JANTX2N7225, JANTXV2N7225 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS(T = 25C unless otherwise noted C Parameter JANTXV, JANTX, 2N7224 Units I V = 10V, T = 25C Continuous Drain Current 34 A D GS C I V = 10V, T = 100C Continuous Drain Current 21 A D GS C 1 I Pulsed Drain Current 136 A DM P T = 25C Maximum Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-Source Voltage 20 V GS 2 4 E Single Pulse Avalanche Energy 150 mJ AS 1 4 I Avalanche Current 34 A AR 1 4 E Repetitive Avalanche Energy 15 mJ AR TJ Operating Junction -55 to 150 C TSTG Storage Temperature Range Lead Temperature 300(.06 from case for 10 sec) C ELECTRICAL CHARACTERISTICS T = 25C (Unless Otherwise Specified) J Parameter Min. Typ. Max. Units Test Conditions BV Drain-Source 100 V V = 0V, I =1.0 mA, DSS GS D Breakdown Voltage 3 R Static Drain-to-Source ------ 0.07 V = 10 V, I = 21 A DS(on) GS D 3 On-State Resistance ------ 0.081 V = 10 V, I = 34 A GS D V Gate Threshold Voltage 2.0 --- 4.0 V V = V , I = 250 A GS(th) DS GS D I Zero Gate Voltage Drain ------ 25 V = 80 V, V = 0V DSS DS GS A Current ------ 250 V = 80 V, V = 0V, T = 125C DS GS J I Gate -to-Source Leakage Forward ------ 100 nA V = 20 V GSS GS I Gate -to-Source Leakage Reverse ------ -100 nA V = -20 V GSS GS Q On-state Gate Charge ------ 125 nC V = 10 V, I = 34A G(on) GS D Q Gate-to-Source Charge ------22 nC V = 50 V GS DS Q Gate-to-Drain (Miller) Charge ------ 65 nC See note 4 Gd t Turn-On Delay Time ------35 ns V = 50 V, I = 21A, R = 2.35 D(on) DD D G t Rise Time ------ 190 ns See note 4 r t Turn-Off Delay Time ------ 170 ns D(off) t Fall Time ------ 130 ns r Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions 3 V Diode Forward Voltage ------ 1.8 V T = 25C, I = 34A V, = 0 V SD J S GS t Reverse Recovery Time ------ 500 ns T = 25C, I = 34A,di/dt<100A/s trr J F Thermal Resistance Parameter Min. Typ. Max. Units Test Conditions R Junction-to-Case ------ 0.83 Mounting surface flat, thJC R Case-to-sink --- 0.21 --- C/W smooth, and greased thCS R Junction-to-Ambient ------ 48 Typical socket mount thJA 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. V = 25V, Starting T = 25C, L >200 H, R = 25 , Peak I = 34A J G L DD 3. Pulse width <300 s Duty Cycle <2% 4. See MIL-S-19500/592 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246