PD-90493G IRFM450 JANTX2N7228 JANTXV2N7228 500V, N-CHANNEL POWER MOSFET REF: MIL-PRF-19500/592 THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number R I DS(on) D IRFM450 0.415 12A Description TO-254 HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance Features combined with high trans conductance. HEXFET transistors Simple Drive Requirements also feature all of the well-established advantages of Ease of Paralleling MOSFETs, such as voltage control, very fast switching, Hermetically Sealed ease of paralleling and electrical parameter temperature Electrically Isolated stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, Dynamic dv/dt Rating choppers, audio amplifiers, high energy pulse circuits, and Light Weight virtually any application where high reliability is required. ESD Rating: Class 3A per MIL-STD-750, Method 1020 The HEXFET transistors totally isolated package eliminates the need for additional isolating material between the device and the heat sink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units 12 I V = 10V, T = 25C Continuous Drain Current D GS C 8.0 A I V = 10V, T = 100C Continuous Drain Current D GS C 48 I Pulsed Drain Current DM 150 W P T = 25C Maximum Power Dissipation D C 1.2 W/C Linear Derating Factor 20 V V Gate-to-Source Voltage GS 750 E Single Pulse Avalanche Energy mJ AS A I Avalanche Current 12 AR 15 mJ E Repetitive Avalanche Energy AR 3.5 V/ns dv/dt Peak Diode Recovery dv/dt -55 to + 150 T Operating Junction and J T Storage Temperature Range C STG 300 (0.063 in. /1.6 mm from case for 10s) Lead Temperature 9.3 (Typical) g Weight For Footnotes refer to the page 2. 1 2016-06-16 IRFM450 JANTX2N7228 / JANTXV2N7228 Electrical Characteristics T = 25C (Unless Otherwise Specified) j Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA DSS GS D BV / T Breakdown Voltage Temp. Coefficient 0.68 V/C Reference to 25C, I = 1.0mA DSS J D Static Drain-to-Source On-State 0.415 V = 10V, I = 8.0A GS D R DS(on) Resistance 0.515 V = 10V, I = 12A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D Gfs Forward Transconductance 6.5 S V = 15V, I = 8.0A DS D I 25 V = 400V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 400V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 120 I = 12A G D Q Gate-to-Source Charge 19 nC V = 250V GS DS Q Gate-to-Drain (Miller) Charge 70 V = 10V GD GS t Turn-On Delay Time 35 V = 250V d(on) DD tr Rise Time 190 I = 12A D ns t Turn-Off Delay Time 170 R = 2.35 d(off) G t Fall Time 130 V = 10V f GS Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in Ls +L Total Inductance 6.8 nH D from package) with Source wire internally bonded from Source pin to Drain pad C Input Capacitance 2700 V = 0V iss GS pF C Output Capacitance 600 V = 25V oss DS C Reverse Transfer Capacitance 240 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 12 S A I Pulsed Source Current (Body Diode) 48 SM V Diode Forward Voltage 1.7 V T = 25C,I = 12A, V = 0V SD J S GS t Reverse Recovery Time 1600 ns T = 25C, I = 12A, V 50V rr J F DD Q Reverse Recovery Charge 14 C di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case 0.83 R JC R Case -to-Sink 0.21 C/W CS Junction-to-Ambient (Typical socket mount) 48 R JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L = 10.4mH, Peak I = 12A, V = 10V DD J L GS I 12A, di/dt 130A/s, V 500V, T 150C SD DD J Pulse width 300 s Duty Cycle 2%. 2 2016-06-16