PD-90495H IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 100V, P-CHANNEL POWER MOSFET REF: MIL-PRF-19500/595 THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number R I DS(on) D IRFM9140 -18A 0.20 Description TO-254AA HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance Features combined with high trans conductance. HEXFET transistors Simple Drive Requirements also feature all of the well-established advantages of Ease of Paralleling MOSFETs, such as voltage control, very fast switching, Hermetically Sealed ease of paralleling and electrical parameter temperature Electrically Isolated stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, Dynamic dv/dt Rating choppers, audio amplifiers, high energy pulse circuits, and Light Weight virtually any application where high reliability is required. ESD Rating: Class 2 per MIL-STD-750, Method 1020 The HEXFET transistors totally isolated package eliminates the need for additional isolating material between the device and the heat sink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units -18 I V = -10V, T = 25C Continuous Drain Current D GS C -11 A I V = -10V, T = 100C Continuous Drain Current D GS C -72 I Pulsed Drain Current DM 125 W P T = 25C Maximum Power Dissipation D C 1.0 W/C Linear Derating Factor 20 V V Gate-to-Source Voltage GS 500 E Single Pulse Avalanche Energy mJ AS A I Avalanche Current -18 AR 12.5 mJ E Repetitive Avalanche Energy AR -5.5 V/ns dv/dt Peak Diode Recovery dv/dt -55 to + 150 T Operating Junction and J T Storage Temperature Range C STG 300 (0.063 in. /1.6 mm from case for 10s) Lead Temperature 9.3 (Typical) g Weight For Footnotes refer to the page 2. 1 2016-06-22 IRFM9140 JANTX2N7236 / JANTXV2N7236 / JANS2N7236 Electrical Characteristics T = 25C (Unless Otherwise Specified) j Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -1.0mA DSS GS D BV / T Breakdown Voltage Temp. Coefficient -0.087 V/C Reference to 25C, I = -1.0mA DSS J D Static Drain-to-Source On-State 0.20 V = -10V, I = -11A GS D R DS(on) Resistance 0.22 V = -10V, I = -18A GS D V GS(th) Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A DS GS D Gfs Forward Transconductance 6.2 S V = -15V, I = -11A DS D I -25 V = -80V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A -250 V = -80V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward -100 V = -20V GSS GS nA Gate-to-Source Leakage Reverse 100 V = 20V GS Q Total Gate Charge 60 I = -18A G D Q Gate-to-Source Charge 13 nC V = -50V GS DS Q Gate-to-Drain (Miller) Charge 35.2 V = -10V GD GS t Turn-On Delay Time 35 V = -50V d(on) DD tr Rise Time 85 I = -11A D ns t Turn-Off Delay Time 85 R = 9.1 d(off) G t Fall Time 65 V = -10V f GS Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in Ls +L Total Inductance 6.8 nH D from package) with Source wire internally bonded from Source pin to Drain pad C Input Capacitance 1400 V = 0V iss GS pF C Output Capacitance 600 V = -25V oss DS C Reverse Transfer Capacitance 200 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) -18 S A I Pulsed Source Current (Body Diode) -72 SM V Diode Forward Voltage -5.0 V T = 25C,I = -18A, V = 0V SD J S GS t Reverse Recovery Time 280 ns T = 25C, I = -18A, V -50V rr J F DD Q Reverse Recovery Charge 3.6 C di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case 1.0 R JC R Case -to-Sink 0.21 C/W CS Junction-to-Ambient (Typical socket mount) 48 R JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = -25V, starting T = 25C, L = 3.1mH, Peak I = -18A, V = -10V DD J L GS I -18A, di/dt -100A/s, V -100V, T 150C SD DD J Pulse width 300 s Duty Cycle 2%. 2 2016-06-22