PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF:MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 1.0A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET MO-036AB transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature Features: stability. They are well-suited for applications such as Simple Drive Requirements switching power supplies, motor controls, inverters, Ease of Paralleling choppers, audio amplifiers, high energy pulse circuits, and Hermetically Sealed virtually any application where high reliability is required. Electrically Isolated The HEXFET transistors totally isolated package eliminates Dynamic dv/dt Rating the need for additional isolating material between the device Light-weight and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 1.0 D GS C A I V = 10V, T = 100C Continuous Drain Current 0.6 D GS C I Pulsed Drain Current 4.0 DM P T = 25C Max. Power Dissipation 1.4 W D C Linear Derating Factor 0.011 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 75 mJ AS I Avalanche Current 1.0 A AR E Repetitive Avalanche Energy 0.14 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns T Operating Junction -55 to 150 J C T Storage Temperature Range STG Lead Temperature 300 (0.63 in./1.6 mm from case for 10s) Weight 1.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFG110 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.13 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.7 V = 10V, I = 0.6A DS(on) GS D Resistance 0.8 V = 10V, I = 1.0A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 0.86 S V > 15V, I = 0.6A fs DS DS I Zero Gate Voltage Drain Current 25 V = 80V ,V =0V DSS DS GS A 250 V = 80V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 15 V =10V, I = 1.0A g GS D Q Gate-to-Source Charge 7.5 nC V = 50V gs DS Q Gate-to-Drain (Miller) Charge 7.5 gd t Turn-On Delay Time 20 V = 50V, I = 1.0A, d(on) DD D t Rise Time 25 V =10V, R = 7.5 r GS G ns t Turn-Off Delay Time 40 d(off) t Fall Time 40 f L + L Total Inductance 10 S D Measured from drain lead (6mm/ nH 0.25in. from package) to source lead (6mm/0.25in. from package) C Input Capacitance 180 V = 0V, V = 25V iss GS DS C Output Capacitance 82 pF f = 1.0MHz oss C Reverse Transfer Capacitance 15 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 1.0 S A I Pulse Source Current (Body Diode) 4.0 SM V Diode Forward Voltage 1.5 V T = 25C, I = 1.0A, V = 0V j S GS SD t Reverse Recovery Time 200 ns T = 25C, I = 1.0A, di/dt 100A/s j rr F Q Reverse Recovery Charge 0.83 C V 30V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 17 thJC C/W R Junction-to-Ambient 90 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com