PD-90424D
IRFF210
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784
HEXFET TRANSISTORS JANTXV2N6784
THRU-HOLE-TO-205AF (TO-39) REF:MIL-PRF-19500/556
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF210 200V 1.5 2.25A
The HEXFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
TO-39
The efficient geometry and unique processing of this
latest State of the Art design achieves: very low on-
state resistance combined with high transconductance.
Features:
The HEXFET transistors also feature all of the well
Repetitive Avalanche Ratings
established advantages of MOSFETs such as voltage
Dynamic dv/dt Rating
control, very fast switching, ease of parelleling and
Hermetically Sealed
temperature stability of the electrical parameters.
Simple Drive Requirements
Ease of Paralleling
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, ESD Rating: Class 1A per MIL-STD-750,
Method 1020
audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
I @ V = 10V, T = 25C Continuous Drain Current 2.25
D GS C
A
I @ V = 10V, T = 100C Continuous Drain Current 1.50
D GS C
I Pulsed Drain Current 9.0
DM
P @ T = 25C Max. Power Dissipation 15 W
D C
Linear Derating Factor 0.12 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 48 mJ
AS
I Avalanche Current 2.25 A
AR
E Repetitive Avalanche Energy 1.5 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction -55 to 150
J
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98 (typical) g
For footnotes refer to the last page
www.irf.com 1
IRFF210, JANTX2N6784
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA
DSS GS D
BV / T Temperature Coefficient of Breakdown 0.25 V/C Reference to 25C, I = 1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 1.5 V = 10V, I = 1.50A
DS(on) GS D
Resistance 1.725 V =10V, I = 2.25A
GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 0.9 S V = 15V, I = 1.50A
fs DS DS
I Zero Gate Voltage Drain Current 25 V = 160V, V = 0V
DSS DS GS
250 A V = 160V
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
I Gate-to-Source Leakage Reverse -100 nA V = -20V
GSS GS
Q Total Gate Charge 6.2 V =10V, ID = 2.25A
g GS
Q Gate-to-Source Charge 1.2 nC V = 100V
gs DS
Q Gate-to-Drain (Miller) Charge 5.0
gd
t Turn-On Delay Time 15 V = 100V, I = 2.25A,
d(on) DD D
t Rise Time 20 V =10V, R = 7.5
r GS G
ns
t Turn-Off Delay Time 30
d(off)
t Fall Time 20
f
L L Total Inductance 7.0
Measured from drain lead (6mm/0.25in. from
S + D nH
package) to source lead (6mm/0.25in. from
package)
C Input Capacitance 140 V = 0V, V = 25V
iss GS DS
C Output Capacitance 55 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 8.6
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) 2.25
S
A
I Pulse Source Current (Body Diode) 9.0
SM
V Diode Forward Voltage 1.5 V T = 25C, I = 2.25A, V = 0V
j
SD S GS
t Reverse Recovery Time 350 ns T = 25C, I = 2.25A, di/dt 100A/s
j
rr F
Q Reverse Recovery Charge 3.0 C V 50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 8.3
thJC
C/W
R Junction-to-Ambient 175 Typical socket mount.
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com