PD-90432D IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique TO-39 processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance. Features: The HEXFET transistors also feature all of the well Repetitive Avalanche Ratings established advantages of MOSFETs such as voltage Dynamic dv/dt Rating control, very fast switching, ease of parelleling and Hermetically Sealed temperature stability of the electrical parameters. Simple Drive Requirements They are well suited for applications such as switching Ease of Paralleling power supplies, motor controls, inverters, choppers, ESD Rating: Class 1C per MIL-STD-750, audio amplifiers and high energy pulse circuits. Method 1020 Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 3.0 D GS C A I V = 10V, T = 100C Continuous Drain Current 2.0 D GS C I Pulsed Drain Current 12 DM P T = 25C Max. Power Dissipation 25 W D C Linear Derating Factor 0.20 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 191 mJ AS I Avalanche Current 3.0 A AR E Repetitive Avalanche Energy 2.5 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 0.98 (typical) g For footnotes refer to the last page www.irf.com 1 IRFF330, JANTX2N6800 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.37 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 1.0 V = 10V, I = 2.0A DS(on) GS D Resistance 1.15 V = 10V, I = 3.0A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 2.0 S V = 15V, I = 2.0A fs DS DS I Zero Gate Voltage Drain Current 25 V = 320V, V = 0V DSS DS GS 250 A V = 320V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS I Gate-to-Source Leakage Reverse -100 nA V = -20V GSS GS Q Total Gate Charge 19.1 33 V =10V, ID = 3.0A g GS Q Gate-to-Source Charge 1.0 5.8 nC V = 200V gs DS Q Gate-to-Drain (Miller) Charge 6.7 19.9 gd t Turn-On Delay Time 30 V = 200V, I = 3.0A, d(on) DD D t Rise Time 35 V =10V, R = 7.5 r GS G ns t Turn-Off Delay Time 55 d(off) t Fall Time 35 f L L Total Inductance 7.0 nH Measured from drain lead (6mm/0.25in. from S + D package) to source lead (6mm/0.25in. from package) C Input Capacitance 620 V = 0V, V = 25V iss GS DS C Output Capacitance 200 pF f = 1.0MHz oss C Reverse Transfer Capacitance 75 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 3.0 S A I Pulse Source Current (Body Diode) 12 SM V Diode Forward Voltage 1.4 V T = 25C, I = 3.0A, V = 0V j SD S GS t Reverse Recovery Time 700 ns T = 25C, I = 3.0A, di/dt 100A/s j rr F Q Reverse Recovery Charge 6.2 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 5.0 thJC C/W R Junction-to-Ambient 175 Typical socket mount. thJA Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 www.irf.com