IINCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/592G shall be completed by 1 June 2013. 17 April 2013 SUPERSEDING MIL-PRF-19500/592F 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (E and E ) and maximum AS AR avalanche current (I ). AR 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-276AB, surface mount), and figures 3, 4, and 5 for JANHC and JANKC (die) dimensions. 1.3 Maximum ratings. (T = +25 C, unless otherwise specified). A Type P (1) P V I (2) I (2) I I T V T T GS D1 D2 S DM J ISO R JC (3) and at max (4) 70,000 (5) T T T T T C A C C STG foot = +25C = +25C = +25C = +100C W W V dc A dc A dc A dc A(pk) C C/W 2N7224, 2N7224U 150 4.0 20 34.0 21 34.0 136 -55 0.83 2N7225, 2N7225U 150 4.0 27.4 17 27.4 110 to 0.83 20 2N7227, 2N7227U 150 4.0 14.0 9 14.0 56 +150 400 0.83 20 2N7228, 2N7228U 150 4.0 12.0 8 12.0 48 500 0.83 20 See notes on next page. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/592G 1.3 Maximum ratings - Continued. Type I E E r max (1) (6) AR AS AR DS(on) V = 10 V dc GS I = I D D2 T = +25C T = +150C J J A mj mj 2N7224, 2N7224U 34.0 150 15.0 0.070 0.133 2N7225, 2N7225U 27.4 500 15.0 0.100 0.200 2N7227, 2N7227U 14.0 700 15.0 0.315 0.693 2N7228, 2N7228U 12.0 750 15.0 0.415 0.913 (1) Derate linearly 1.2 W/C for T > +25 C. C (2) The following formula derives the maximum theoretical I limit. I is limited by package and internal wires D D and may be limited by pin diameter: - TJM TC = ID ( ) x ( ( on ) at ) R R T JC DS JM (3) See figure 6, maximum drain current graph. (4) I = 4 X I as calculated in note (2). DM D1 (5) See figure 7, thermal impedance curves. (6) Pulsed (see 4.5.1). 1.4 Primary electrical characteristics. T = +25 C (unless otherwise specified). C Max I Max r (1) DSS1 DS(on) Type Min V V (BR)DSS GS(th)1 V = 10 V dc GS V = 0 GS I = I D D2 V = 0 V V V GS DS DS GS T = +25C = 80 percent J I = 1.0 mA dc of rated V I = 0.25 mA D D DS V dc V dc A dc Ohms Min Max 2N7224, 2N7224U 100 2.0 4.0 0.070 25 2N7225, 2N7225U 200 2.0 4.0 0.100 25 2N7227, 2N7227U 400 2.0 4.0 0.315 25 2N7228, 2N7228U 500 2.0 4.0 25 0.415 (1) Pulsed (see 4.5.1). 2