Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comS25FL064L 64-Mb (8-MB), 3.0 V FL-L SPI Flash Memory General Description The Cypress FL-L Family devices are Flash Nonvolatile Memory products using: Floating Gate technology 65-nm process lithography The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO), and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and provides individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase. By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data. Features Serial Peripheral Interface (SPI) with Multi-I/O Status and configuration Register protection Four security regions of 256-bytes each outside the main Clock polarity and phase modes 0 and 3 Flash array Double Data Rate (DDR) option Legacy block protection: Block range Quad peripheral interface (QPI) option Individual and region protection Extended addressing: 24 or 32 bit address options Individual block lock: Volatile individual sector/block Serial command subset and footprint compatible with S25FL- Pointer region: Nonvolatile sector/block range A, S25FL1-K, S25FL-P, S25FL-S, and S25FS-S SPI families Power supply Lock-down, password, or permanent protec- Multi I/O command subset and footprint compatible with S25- tion of security regions 2 and 3 and pointer region FL-P, S25FL-S and S25FS-S SPI families Technology Read 65-nm Floating Gate technology Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, Qua- dO, DDR Quad I/O Single Supply Voltage with CMOS I/O Modes: Burst wrap, Continuous (XIP), QPI 2.7 V to 3.6 V Serial flash discoverable parameters (SFDP) for configura- tion information Temperature Range / Grade Industrial (40C to +85C) Program Architecture Industrial Plus (40C to +105C) 256-Bytes page programming buffer Automotive, AEC-Q100 Grade 3 (40C to +85C) Program suspend and resume Automotive, AEC-Q100 Grade 2 (40C to +105C) Erase Architecture Automotive, AEC-Q100 Grade 1 (40C to +125C) Uniform 4 KB sector erase Packages (All Pb-free) Uniform 32 KB half block erase 8-lead SOIC 208 mil (SOC008) Uniform 64 KB block erase 16-lead SOIC 300 mil (SO3016) Chip erase USON 4 4 mm (UNF008) Erase suspend and resume WSON 5 x 6 mm (WND008) 100,000 Program-Erase Cycles, minimum BGA-24 6 8 mm 5 5 ball (FAB024) footprint 20 Year Data Retention, minimum 4 6 ball (FAC024) footprint Security Features Known good die and known tested die Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-12878 Rev. *F Revised January 29, 2019