X-On Electronics has gained recognition as a prominent supplier of SI4410DYPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4410DYPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4410DYPBF Infineon

SI4410DYPBF electronic component of Infineon
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See Product Specifications
Part No.SI4410DYPBF
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; 1.6W; SO8
Datasheet: SI4410DYPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.1153
10 : USD 1.0052
25 : USD 0.929
50 : USD 0.9105
N/A

Obsolete
0

Multiples : 3800
N/A

Obsolete
0
MOQ : 1191
Multiples : 1
1191 : USD 0.2738
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7745
10 : USD 0.8641
100 : USD 0.5248
500 : USD 0.4791
1000 : USD 0.4201
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8124
5 : USD 0.4969
62 : USD 0.4721
N/A

Obsolete
0
MOQ : 18
Multiples : 18
18 : USD 0.6584
N/A

Obsolete
0
MOQ : 18
Multiples : 18
18 : USD 0.6571
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI4410DYPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4410DYPBF and other electronic components in the MOSFETs category and beyond.

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PD - 95168 Si4410DYPbF HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance A Low Gate Charge A 1 8 S D Surface Mount V = 30V DSS 2 7 S D Logic Level Drive 3 6 S Lead-Free D 4 5 G D R = 0.0135 DS(on) Description Top View This N-channel HEXFET Power MOSFET is produced using International Rectifier s advanced HEXFET power MOSFET technology. The low on- resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Parameter Max. Units V Drain- Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 70C Continuous Drain Current, V 10V 8.0 A D A GS I Pulsed Drain Current 50 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 5.0 V/ns E Single Pulse Avalanche Energy 400 mJ AS V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 09/22/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.0100.0135 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance DS(on) 0.015 0.020 V = 4.5V, I = 5.0A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 35 S V = 15V, I = 10A fs DS D 1.0 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 30V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 30 45 I = 10A g D Q Gate-to-Source Charge 5.4 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 6.5 V = 10V, See Fig. 10 gd GS t Turn-On Delay Time 11 V = 25V d(on) DD t Rise Time 7.7 I = 1.0A r D t Turn-Off Delay Time 38 R = 6.0 d(off) G t Fall Time 44 R = 25, f D C Input Capacitance 1585 V = 0V iss GS C Output Capacitance 739 pF V = 15V oss DS C Reverse Transfer Capacitance 106 = 1.0MHz, See Fig. 9 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Diode Conduction) showing the G I Pulsed Source Current integral reverse SM 50 (Body Diode) p-n junction diode. S V Diode Forward Voltage 0.7 1.1 V T = 25C, I = 2.3A, V = 0V SD J S GS Reverse Recovery Time 50 80 ns T = 25C, I = 2.3A t rr J F Starting T = 25C, L = 8.0mH Repetitive rating pulse width limited by J R = 25, I = 10A. (See Figure 15) max. junction temperature. G AS I A, di/dt 130A/s, V V , SD DD (BR)DSS Pulse width 300s duty cycle T 150C J When mounted on FR4 Board, t 10 sec 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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