PD - 95168 Si4410DYPbF HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance A Low Gate Charge A 1 8 S D Surface Mount V = 30V DSS 2 7 S D Logic Level Drive 3 6 S Lead-Free D 4 5 G D R = 0.0135 DS(on) Description Top View This N-channel HEXFET Power MOSFET is produced using International Rectifier s advanced HEXFET power MOSFET technology. The low on- resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Parameter Max. Units V Drain- Source Voltage 30 V DS I T = 25C Continuous Drain Current, V 10V 10 D A GS I T = 70C Continuous Drain Current, V 10V 8.0 A D A GS I Pulsed Drain Current 50 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C dv/dt Peak Diode Recovery dv/dt 5.0 V/ns E Single Pulse Avalanche Energy 400 mJ AS V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 09/22/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.0100.0135 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance DS(on) 0.015 0.020 V = 4.5V, I = 5.0A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 35 S V = 15V, I = 10A fs DS D 1.0 V = 30V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 30V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 30 45 I = 10A g D Q Gate-to-Source Charge 5.4 nC V = 15V gs DS Q Gate-to-Drain Mille) Charge 6.5 V = 10V, See Fig. 10 gd GS t Turn-On Delay Time 11 V = 25V d(on) DD t Rise Time 7.7 I = 1.0A r D t Turn-Off Delay Time 38 R = 6.0 d(off) G t Fall Time 44 R = 25, f D C Input Capacitance 1585 V = 0V iss GS C Output Capacitance 739 pF V = 15V oss DS C Reverse Transfer Capacitance 106 = 1.0MHz, See Fig. 9 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.3 (Diode Conduction) showing the G I Pulsed Source Current integral reverse SM 50 (Body Diode) p-n junction diode. S V Diode Forward Voltage 0.7 1.1 V T = 25C, I = 2.3A, V = 0V SD J S GS Reverse Recovery Time 50 80 ns T = 25C, I = 2.3A t rr J F Starting T = 25C, L = 8.0mH Repetitive rating pulse width limited by J R = 25, I = 10A. (See Figure 15) max. junction temperature. G AS I A, di/dt 130A/s, V V , SD DD (BR)DSS Pulse width 300s duty cycle T 150C J When mounted on FR4 Board, t 10 sec 2 www.irf.com