X-On Electronics has gained recognition as a prominent supplier of SPA11N60CFD MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA11N60CFD MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA11N60CFD Infineon

SPA11N60CFD electronic component of Infineon
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See Product Specifications
Part No.SPA11N60CFD
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET COOL MOS PWR TRANS 600V 11A
Datasheet: SPA11N60CFD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 1.716 ea
Line Total: USD 858 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 4.1596
10 : USD 3.672
30 : USD 3.3813
100 : USD 3.0886
500 : USD 2.9537
1000 : USD 2.8918

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 500
Multiples : 500
500 : USD 1.716
1000 : USD 1.507
2500 : USD 1.507
5000 : USD 1.441

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 17
Multiples : 1
17 : USD 1.7149

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Rise Time
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We are delighted to provide the SPA11N60CFD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA11N60CFD and other electronic components in the MOSFETs category and beyond.

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SPA11N60CFD TM CoolMOS Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated 0) Qualified for industrial grade applications according to JEDEC Type Package Ordering Code Marking SPA11N60CFD TO-220-3-31 SP000216317 11N60CFD Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C 11 A Continuous drain current D C T =100 C 7 C 2) I T =25 C 28 Pulsed drain current D,pulse C E I =5.5 A, V =50 V Avalanche energy, single pulse 340 mJ AS D DD 2),3) E I =11 A, V =50 V 0.6 Avalanche energy, repetitive AR D DD 2),3) I 11 A Avalanche current, repetitive AR I =11 A, V =480 V, D DS Drain source voltage slope dv /dt 80 V/ns T =125 C j 40 Reverse diode dv /dt dv /dt V/ns I =11 A, V =480 V, S DS T =125 C j 600 Maximum diode commutation speed di /dt A/s V 20 Gate source voltage static V GS 30 AC (f >1 Hz) P T =25 C 33 Power dissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 1.4 page 1 2010-12-21SPA11N60CFD Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3.8 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient 1.6 mm (0.063 in.) T Soldering temperature, wave soldering - - 260 C sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D V V =0 V, I =11 A Avalanche breakdown voltage - 700 - (BR)DS GS D Gate threshold voltage V V =V , I =1.9 mA 3 4 5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - 1.1 - A DSS T =25 C j V =600 V, V =0 V, DS GS - 900 - T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =7 A, GS D R Drain-source on-state resistance - 0.38 0.44 DS(on) T =25 C j V =10 V, I =7 A, GS D - 1.02 - T =150 C j R Gate resistance f =1 MHz, open drain - 0.86 - G V >2 I R , DS D DS(on)max Transconductance g - 8.3 - S fs I =7 A D Rev. 1.4 page 2 2010-12-21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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