SPA11N60CFD TM CoolMOS Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated 0) Qualified for industrial grade applications according to JEDEC Type Package Ordering Code Marking SPA11N60CFD TO-220-3-31 SP000216317 11N60CFD Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C 11 A Continuous drain current D C T =100 C 7 C 2) I T =25 C 28 Pulsed drain current D,pulse C E I =5.5 A, V =50 V Avalanche energy, single pulse 340 mJ AS D DD 2),3) E I =11 A, V =50 V 0.6 Avalanche energy, repetitive AR D DD 2),3) I 11 A Avalanche current, repetitive AR I =11 A, V =480 V, D DS Drain source voltage slope dv /dt 80 V/ns T =125 C j 40 Reverse diode dv /dt dv /dt V/ns I =11 A, V =480 V, S DS T =125 C j 600 Maximum diode commutation speed di /dt A/s V 20 Gate source voltage static V GS 30 AC (f >1 Hz) P T =25 C 33 Power dissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg Rev. 1.4 page 1 2010-12-21SPA11N60CFD Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3.8 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient 1.6 mm (0.063 in.) T Soldering temperature, wave soldering - - 260 C sold from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 600 - - V (BR)DSS GS D V V =0 V, I =11 A Avalanche breakdown voltage - 700 - (BR)DS GS D Gate threshold voltage V V =V , I =1.9 mA 3 4 5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - 1.1 - A DSS T =25 C j V =600 V, V =0 V, DS GS - 900 - T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =7 A, GS D R Drain-source on-state resistance - 0.38 0.44 DS(on) T =25 C j V =10 V, I =7 A, GS D - 1.02 - T =150 C j R Gate resistance f =1 MHz, open drain - 0.86 - G V >2 I R , DS D DS(on)max Transconductance g - 8.3 - S fs I =7 A D Rev. 1.4 page 2 2010-12-21