SPA15N65C3 TM CoolMOS Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 2) I T =25 C 15 A Continuous drain current D C T =100 C 9.4 C 3) 45 I T =25 C Pulsed drain current D,pulse C E I =3 A, V =50 V Avalanche energy, single pulse 460 mJ AS D DD 2),3) E I =5 A, V =50 V Avalanche energy, repetitive t 0.8 AR D DD AR 3),4) I 5.0 A Avalanche current, repetitive t AR AR V =0...480 V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS Gate source voltage V static 20 V GS 30 AC (f >1 Hz) Power dissipation P T =25 C 34 W tot C T , T -55 ... 150 Operating and storage temperature C j stg Mounting torque M3 and M3.5 screws 50 Ncm Rev. 2.0 page 1 2008-03-12SPA15N65C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I 15 A Continuous diode forward current S T =25 C C 3) I 45 Diode pulse current S,pulse Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3.7 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A Drain-source breakdown voltage 650 - - V (BR)DSS GS D V =V , DS GS V Gate threshold voltage 2.1 3 3.9 GS(th) I =0.675 mA D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - 0.5 25 A DSS T =25 C j V =600 V, V =0 V, DS GS -25- T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =9.4 A, GS D R Drain-source on-state resistance - 0.25 0.28 DS(on) T =25 C j V =10 V, I =9.4 A, GS D - 0.68 - T =150 C j Gate resistance R f =1 MHz, open drain - 1.4 - G Rev. 2.0 page 2 2008-03-12