SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor V 800 V DS Feature R 0.29 DS(on) New revolutionary high voltage technology I 17 A D Worldwide best R in TO 220 DS(on) PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-220-3-31: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP17N80C3 PG-TO220 Q67040-S4353 17N80C3 SPA17N80C3 PG-TO220-3-31SP000216353 17N80C3 Maximum Ratings Parameter Symbol Value Unit SPP SPA Continuous drain current I A D 1) T = 25 C 17 17 C 1) T = 100 C 11 11 C Pulsed drain current, t limited by T I 51 51 A p jmax D puls Avalanche energy, single pulse E 670 670 mJ AS I =3.4A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.5 0.5 AR AR jmax I =17A, V =50V D DD Avalanche current, repetitive t limited by T I 17 17 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 208 42 W C tot Operating and storage temperature T , T -55...+150 C j stg Rev. 2. 7 Page 1 201 1-09- 27 Final Data Sheet 1 Rev. 2.8, 2017-07-25SPP17N80C3 SPA17N80C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 640 V, I = 17 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.6 K/W Thermal resistance, junction - case thJC - - 3.6 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 4) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 800 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =17A - 870 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =1000A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =800V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.5 25 j T =150C - - 250 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =11A Drain-source on-state resistance R GS D DS(on) T =25C - 0.25 0.29 j T =150C - 0.78 - j R f=1MHz, open drain - 0.7 - Gate input resistance G Rev. 2.7 Page 2 201 1-09- 27 Final Data Sheet 2 Rev. 2.8, 2017-07-25