SPB17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS new revolutionary high voltage technology R T = 25C 0.29 DS(on)max j Extreme dv/dt rated Q 91 nC g,typ High peak current capability 1) Qualified according to JEDEC for target applications PG-TO263 Pb-free lead plating RoHS compliant Ultra low gate charge Ultra low effective capacitances TM CoolMOS 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type Package Marking SPB17N80C3 PG-TO263 17N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 17 A D C T =100 C 11 C 2) I T =25 C 51 Pulsed drain current D,pulse C E I =3.4 A, V =50 V Avalanche energy, single pulse 670 mJ AS D DD 2),3) E I =17 A, V =50 V Avalanche energy, repetitive t 0.5 AR D DD AR 2),3) I 17 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0640 V 50 V/ns DS V 20 Gate source voltage static V GS AC (f >1 Hz) 30 P T =25 C 227 Power dissipation W tot C Operating and storage temperature T , T -55 ... 150 C j stg Rev. 2.5 page 1 2011-09-27SPB17N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous diode forward current I 17 A S T =25 C C 2) I 51 Diode pulse current S,pulse 4) Reverse diode dv /dt dv /dt 4 V/ns Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.55 K/W thJC SMD version, device R on PCB, minimal -- 62 thJA footprint Thermal resistance, junction - SMD version, device ambient 2 on PCB, 6 cm cooling -35- 4) area Soldering temperature, T MSL1 10s - - 260 C sold reflow soldering Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 800 - - V (BR)DSS GS D V V =0 V, I =17 A Avalanche breakdown voltage - 870 - (BR)DS GS D Gate threshold voltage V V =V , I =1.0 mA 2.1 3 3.9 GS(th) DS GS D V =800 V, V =0 V, DS GS Zero gate voltage drain current I - - 25 A DSS T =25 C j V =800 V, V =0 V, DS GS - 150 - T =150 C j Gate-source leakage current I V =20 V, V =0 V - - 100 nA GSS GS DS V =10 V, I =11 A, GS D R Drain-source on-state resistance - 0.25 0.29 DS(on) T =25 C j V =10 V, I =11 A, GS D - 0.67 - T =150 C j R Gate resistance f =1 MHz, open drain - 0.85 - G Rev. 2.5 page 2 2011-09-27