SPB21N50C3 Cool MOS Power Transistor V T 560 V DS jmax R 0.19 DS(on) Feature I 21 A D New revolutionary high voltage technology PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current I A D T = 25 C 21 C T = 100 C 13.1 C Pulsed drain current, t limited by T I 63 A p jmax D puls Avalanche energy, single pulse E 690 mJ AS I =10A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 1 AR AR jmax I =21A, V =50V D DD Avalanche current, repetitive t limited by T I 21 A AR jmax AR Gate source voltage V 20 V GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 208 W C tot Operating and storage temperature T , T -55...+150 C j stg 7) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.3 Page 1 2005-11-07SPB21N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 21 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.6 K/W Thermal resistance, junction - case thJC - - 3.6 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, reflow soldering, MSL1 T sold 4) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 500 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =21A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =1000A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.1 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =13.1A Drain-source on-state resistance R GS D DS(on) T =25C - 0.16 0.19 j T =150C - 0.54 - j R f=1MHz, open drain - 0.53 - Gate input resistance G Rev. 2.3 Page 2 2005-11-07