SPD04P10P G SIPMOS Power-Transistor Product Summary Features V -100 V DS P-Channel R 1 DS(on),max Enhancement mode I -4 A D Normal level Avalanche rated PG-TO252-3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing Tape and reel information SPD04P10P G PG-TO252-3 04P10P Yes Non dry 1000 pcs / reel Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C -4 Continuous drain current A D C T =100 C -2.8 C I V =-10 V, I =-2.8 A -16 Pulsed drain current D,pulse GS D E Avalanche energy, single pulse I =-4 A, R =25 57 mJ AS D GS V 20 Gate source voltage V GS Power dissipation P T =25 C 38 W tot C T , T -55 ... 175 Operating and storage temperature C j stg ESD class JESD22-A114-HBM 1A (250 V to 500 V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/175/56 Rev 1.6 page 1 2012-09-10SPD04P10P G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 3.9 K/W thJC junction - soldering point Thermal resistance, minimal footprint, R -- 75 thJA junction - ambient steady state 2 1) 6 cm cooling area , -- 50 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage -100 - - V (BR)DSS GS D V =V , DS GS Gate threshold voltage V -2.1 -3.0 -4 GS(th) I =-380 A D V =-100 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-100 V, V =0 V, DS GS - -10 -100 T =150 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =-10 V, I =-2.8 A - 644 1000 m DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 1.2 2.4 - S fs I =-2.8 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.6 page 2 2012-09-10