SPD04P10PL G SIPMOS Power-Transistor Product Summary Features V -100 V DS P-Channel R 850 m DS(on),max Enhancement mode I -4.2 A D Logic level Avalanche rated PG-TO-252-3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing Tape and reel information SPD04P10PL G PG-TO252-3 04P10PL Yes Non dry 1000 pcs / reel Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit steady state I T =25 C Continuous drain current -4.2 A D C T =100 C 3.0 C I T =25 C Pulsed drain current -16.8 D,pulse C E I =-4.2 A, R =25 57 Avalanche energy, single pulse mJ AS D GS Gate source voltage V 20 V GS P T =25 C 38 Power dissipation W tot C Operating and storage temperature T , T -55 ... 175 C j stg 1A (250 V to 500 V) ESD class JESD22-A114-HBM Soldering temperature 260 C 55/175/56 IEC climatic category DIN IEC 68-1 Rev 1.6 page 1 2012-09-10SPD04P10PL G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 3.9 K/W thJC junction - soldering point Thermal resistance, minimal footprint, R -- 75 thJA junction - ambient steady state 2 1) 6 cm cooling area , -- 50 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 mA Drain-source breakdown voltage -100 - - V (BR)DSS GS D V V =V , I =-380 A Gate threshold voltage -1 -1.5 -2 GS(th) DS GS D V =-100 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-100 V, V =0 V, DS GS - -10 -100 T =150 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS V =-4.5 V, I =- GS D Drain-source on-state resistance R - 787 1050 DS(on) m 2.75 A V =-10 V, I =-3.0 A - 550 850 GS D V >2 I R , DS D DS(on)max g Transconductance 1.5 3.0 - S fs I =-3.0 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.6 page 2 2012-09-10