X-On Electronics has gained recognition as a prominent supplier of SPP18P06PHXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPP18P06PHXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPP18P06PHXKSA1 Infineon

SPP18P06PHXKSA1 electronic component of Infineon
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See Product Specifications
Part No.SPP18P06PHXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET SMALL SIGNAL+P-CH
Datasheet: SPP18P06PHXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12: USD 1.0591 ea
Line Total: USD 12.71 
Availability - 1606
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 1
Multiples : 1
1 : USD 2.3918
10 : USD 1.3949
100 : USD 1.2546
500 : USD 0.9661
1000 : USD 0.8164
2500 : USD 0.7607
10000 : USD 0.7327

477
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 1
Multiples : 1
1 : USD 2.3427
10 : USD 1.742
100 : USD 1.4023
500 : USD 1.2311
1000 : USD 0.938
5000 : USD 0.8961

24
Ship by Tue. 15 Oct to Fri. 18 Oct
MOQ : 1
Multiples : 1
1 : USD 1.9062
10 : USD 1.6499
30 : USD 1.4874
100 : USD 1.3231
500 : USD 1.2485
1000 : USD 1.2161

145
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 1
Multiples : 1
1 : USD 1.946
3 : USD 1.736
10 : USD 1.554
14 : USD 1.33
38 : USD 1.26

1940
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 500
Multiples : 500
500 : USD 0.8888

1606
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 12
Multiples : 1
12 : USD 1.0591
100 : USD 0.8851
500 : USD 0.815
1000 : USD 0.7425
2500 : USD 0.7145
10000 : USD 0.6912

14916
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 22
Multiples : 1
22 : USD 1.943
50 : USD 1.7923
100 : USD 1.335
200 : USD 1.2613
500 : USD 1.1474
1000 : USD 1.1222
2000 : USD 1.0972
4000 : USD 1.0704

485
Ship by Tue. 08 Oct to Mon. 14 Oct
MOQ : 12
Multiples : 1
12 : USD 1.6899
100 : USD 1.162
500 : USD 0.9986
1000 : USD 0.8513
2500 : USD 0.799
10000 : USD 0.7578

   
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We are delighted to provide the SPP18P06PHXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPP18P06PHXKSA1 and other electronic components in the MOSFETs category and beyond.

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SPP18P06PH SIPMOS Small-Signal-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.7 A D Avalanche rated dv /dt rated PG-TO220-3-1 175C operating temperature Pb-free lead finishing RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free SPP18P06PH PG-TO220-3 Yes 50pcs/tube 18P06P Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit steady state I T =25 C -18.7 Continuous drain current A D A T =100 C -13.2 A Pulsed drain current I T =25 C -74.8 D,pulse A E I =18.7 A, R =25 151 Avalanche energy, single pulse mJ AS D GS Avalanche energy, periodic limited by E 8 AR T jmax I =18.7 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =-200 A/s, -6 kV/s T =175 C j,max V 20 Gate source voltage V GS 1) Power dissipation P 81.1 W T =25 C tot A Operating and storage temperature T , T-55 ... +175 C j stg Class 1C( >1000V <2000V) ESD class 260 C Soldering temperature 55/150/56 IEC climatic category DIN IEC 68-1 Rev1.92 page 1 2014-11-21SPP18P06P H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.85 K/W thJC junction - case Thermal resistance, R -- 62 thJA junction - ambient, leaded R SMD version, device on PCB: minimal footprint - - 62 K/W thJA 2 1) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250 A Drain-source breakdown voltage -60 - - V (BR)DSS GS D V =V , I =- DS GS D Gate threshold voltage V -2.1 2.7 -4 GS(th) 1000 A V =-60 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-60 V, V =0 V, DS GS - -10 -100 T =150 C j Gate-source leakage current I V =-20 V, V =0 V - -10 -100 nA GSS GS DS R V =-10 V, I =-13.2 A Drain-source on-state resistance - 102 130 m DS(on) GS D V >2 I R , DS D DS(on)max g Transconductance 510 - S fs I =-13.2 A D 1) 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev1.92 page 2 2014-11-21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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