SPP24N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 0.16 DS(on) New revolutionary high voltage technology I 24.3 A D Worldwide best R in TO 220 DS(on) PG-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPP24N60C3 PG-TO220-3-1 Q67040-S4639 24N60C3 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 24.3 C T = 100 C 15.4 C 72.9 Pulsed drain current, t limited by T I p jmax D puls 780 mJ Avalanche energy, single pulse E AS I = 10 A, V = 50 V D DD 1) E 1 Avalanche energy, repetitive t limited by T AR AR jmax I = 24.3 A, V = 50 V D DD 24.3 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage static V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 240 W C tot C Operating and storage temperature T , T -55... +150 j stg 4) Reverse diode dv/dt dv/dt 15 V/ns Page 1 Rev. 2.5 2009-12-01SPP24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 , I = 24.3 , T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 0.52 K/W Thermal resistance, junction - case thJC R - - 62 Thermal resistance, junction - ambient, leaded thJA Soldering temperature, wavesoldering T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =24.3A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage Gate threshold voltage V I =1200, V =V 2.1 3 3.9 D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.1 1 j T =150C - - 100 j V =20, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =15.4A, Drain-source on-state resistance R GS D DS(on) T =25C - 0.14 0.16 j T =150C - 0.34 - j R f=1MHz, open Drain - 0.66 - Gate input resistance G Page 2 Rev. 2.5 2009-12-01