SPW32N50C3
Cool MOS Power Transistor
V @ T 560 V
DS jmax
Feature
R 0.11
DS(on)
New revolutionary high voltage technology
I 32 A
D
Ultra low gate charge
PG-TO247
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
Type Package Ordering Code Marking
SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3
Maximum Ratings
Parameter Symbol Value Unit
A
Continuous drain current I
D
T = 25 C 32
C
T = 100 C 20
C
96
Pulsed drain current, t limited by T I
p jmax D puls
1100 mJ
Avalanche energy, single pulse E
AS
I = 10 A, V = 50 V
D DD
1)
E 1
Avalanche energy, repetitive t limited by T
AR
AR jmax
I = 20 A, V = 50 V
D DD
20 A
Avalanche current, repetitive t limited by T I
AR jmax AR
Gate source voltage V V
20
GS
V
Gate source voltage AC (f >1Hz) 30
GS
Power dissipation, T = 25C P 284 W
C
tot
C
Operating and storage temperature T , T -55... +150
j stg
4)
V/ns
Reverse diode dv/dt 15
dv/dt
Page 1
Rev. 2.5 2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-ASPW32N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V = 400 V, I = 32 A, T = 125 C
DS D j
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
R - - 0.44 K/W
Thermal resistance, junction - case
thJC
R - - 62
Thermal resistance, junction - ambient, leaded
thJA
Soldering temperature, wavesoldering T - - 260 C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
V V =0V, I =0.25mA 500 - - V
Drain-source breakdown voltage
(BR)DSS GS D
V =0V, I =20A - 600 -
Drain-Source avalanche V
GS D
(BR)DS
breakdown voltage
I =1800, V =V 2.1 3 3.9
Gate threshold voltage V
D GS DS
GS(th)
V =500V, V =0V, A
Zero gate voltage drain current I
DS GS
DSS
T =25C,
- 0.5 25
j
T =150C
- - 250
j
V =20V, V =0V - - 100 nA
Gate-source leakage current I
GS DS
GSS
V =10V, I =20A,
Drain-source on-state resistance R
GS D
DS(on)
T =25C
- 0.09 0.11
j
T =150C
- 0.27 -
j
R f=1MHz, open Drain - 0.8 -
Gate input resistance
G
Page 2 2008-02-11
Rev. 2.5
Please note the new package dimensions arccording to PCN 2009-134-A