X-On Electronics has gained recognition as a prominent supplier of IS64C25616AL-12CTLA3 SRAM across the USA, India, Europe, Australia, and various other global locations. IS64C25616AL-12CTLA3 SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS64C25616AL-12CTLA3 ISSI

IS64C25616AL-12CTLA3 electronic component of ISSI
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Part No.IS64C25616AL-12CTLA3
Manufacturer: ISSI
Category: SRAM
Description: SRAM 4Mb,High-Speed,Async,256K x 16,12ns,5v,44 Pin TSOP II, RoHS, Automotive
Datasheet: IS64C25616AL-12CTLA3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.545 ea
Line Total: USD 8.54 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 135
Multiples : 135
135 : USD 10.5972

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 11.561
10 : USD 10.89
25 : USD 10.637
100 : USD 9.57
270 : USD 9.24
540 : USD 9.141
1080 : USD 9.031
2565 : USD 9.009
5130 : USD 9.009

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 135
Multiples : 135
135 : USD 16.8054

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 8.545
10 : USD 8.0392

   
Manufacturer
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RoHS - XON
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We are delighted to provide the IS64C25616AL-12CTLA3 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS64C25616AL-12CTLA3 and other electronic components in the SRAM category and beyond.

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IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM MARCH 2020 FEATURES DESCRIPTION The ISSI IS61C25616AL/AS and IS64C25616AL/AS are HIGH SPEED: (IS61/64C25616AL) high-speed, 4,194,304-bit static RAMs organized as 262,144 High-speed access time: 10ns, 12 ns words by 16 bits. They are fabricated using ISSI s high- Low Active Power: 150 mW (typical) performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields Low Standby Power: 10 mW (typical) access times as fast as 12 ns with low power consumption. CMOS standby LOW POWER: (IS61/64C25616AS) When CE is HIGH (deselected), the device assumes a High-speed access time: 25 ns standby mode at which the power dissipation can be reduced down with CMOS input levels. Low Active Power: 75 mW (typical) Low Standby Power: 1 mW (typical) Easy memory expansion is provided by using Chip Enable CMOS standby and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. TTL compatible interface levels A data byte allows Upper Byte (UB) and Lower Byte (LB) Single 5V 10% power supply access. Fully static operation: no clock or refresh required The IS61C25616AL/AS and IS64C25616AL/AS are pack- aged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin Available in 44-pin SOJ package and TSOP (Type II). 44-pin TSOP (Type II) Commercial, Industrial and Automotive tempera- ture ranges available Lead-free available FUNCTIONAL BLOCK DIAGRAM 256K x 16 A0-A17 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1 Rev. C 1 03/02/2020IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS PIN CONFIGURATIONS 44-Pin TSOP (Type II) 44-Pin SOJ A15 1 44 A0 A15 1 44 A0 A14 2 43 A1 A14 2 43 A1 A13 3 42 A2 A13 3 42 A2 A12 4 41 OE A12 4 41 OE A11 5 40 UB A11 5 40 UB CE 6 39 LB CE 6 39 LB I/O0 7 38 I/O15 I/O0 7 38 I/O15 I/O1 8 37 I/O14 I/O1 8 37 I/O14 I/O2 9 36 I/O13 I/O2 9 36 I/O13 I/O3 10 35 I/O12 I/O3 10 35 I/O12 VDD 11 34 GND VDD 11 34 GND GND 12 33 VDD GND 12 33 VDD 32 I/O4 13 I/O11 I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O6 15 30 I/O9 I/O7 16 29 I/O8 I/O7 16 29 I/O8 WE 17 28 NC WE 17 28 NC A10 18 27 A3 A10 18 27 A3 A9 19 26 A4 A9 19 26 A4 A8 20 25 A5 A8 20 25 A5 A7 21 24 A6 A7 21 24 A6 A16 22 23 A17 A16 22 23 A17 PIN DESCRIPTIONS A0-A17 Address Inputs LB Lower-byte Control (I/O0-I/O7) I/O0-I/O15 Data Inputs/Outputs UB Upper-byte Control (I/O8-I/O15) CE Chip Enable Input NC No Connection OE Output Enable Input VDD Power WE Write Enable Input GND Ground 2 Integrated Silicon Solution, Inc. www.issi.com Rev. C 1 03/02/2020

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
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