IXA70I1200NA IXYS

IXA70I1200NA V= 1200V CES XPT IGBT I= 100A C25 VV= 1.8 CE(sat) Single IGBT Part number IXA70I1200NA Backside: isolated (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~ 3000 coefficient of the on-state voltage Solar inverter Industry standard outline Rugged XPT design (Xtreme light Punch Through) Medical equipment RoHS compliant results in: Uninterruptible power supply Epoxy meets UL 94V-0 - short circuit rated for 10 sec. Air-conditioning systems Base plate: Copper - very low gate charge Welding equipment internally DCB isolated - low EMI Switched-mode and resonant-mode Advanced power cycling - square RBSOA 3x Ic power supplies Either emitter terminal can be used Thin wafer technology combined with the XPT design Inductive heating, cookers as main or Kelvin emitter results in a competitive low VCE(sat) Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20140708c 2014 IXYS all rights reservedIXA70I1200NA Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 100 A C25 C I T = 80 C 65 A C C80 total power dissipation P T = 25C 350 W tot C collector emitter saturation voltage V I = A V = 15 V50 T = 25C 1.8 2.1 V CE(sat) CGE VJ T = 125 C 2.1 V VJ gate emitter threshold voltage V I = 2mA V = V T = 25C 5.4 5.9 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V V = 0 V T = 25C 0.1 mA CES CE CES GE VJ T = 125 C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 60 0 V V = 15 V I = 50 A 190 nC G(on) CE GE C turn-on delay time t 70 ns d(on) current rise time t 40 ns r inductive load T = 125 C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 50 A CE C current fall time t 100 ns f V = 15 V R = 15 GE G turn-on energy per pulse E 4.5 mJ on turn-off energy per pulse E 5.5 mJ off reverse bias safe operating area RBSOA V = 15 V R = 15 T = 125 C GE G VJ A I V = 1200 V 150 CM CEmax short circuit safe operating area SCSOA V = 12 00 V CEmax short circuit duration t SC V = 900 V V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 15 non-repetitive 200 A SC G thermal resistance junction to case R 0.35 K/W thJC thermal resistance case to heatsink K/W R 0.10 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C tbd F25 C I T = 80 C tbd A F 80 C forward voltage V I = A T = 25C tbd V F F VJ T = 125C tbd V VJ reverse current V = V mA I T = 25C * R R RRM VJ * not applicable, see Ices at IGBT T = 125C * mA VJ reverse recovery charge Q tbd C rr V = 600 V R max. reverse recovery current I tbd A RM -di /dt = A/s T = 125C F VJ reverse recovery time t tbd ns rr I = A V = 0 V FGE reverse recovery energy E tbd mJ rec thermal resistance junction to case R tbd K/W thJC thermal resistance case to heatsink R K/W thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20140708c 2014 IXYS all rights reserved