Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGA20N120B3 CES I = 20A IXGP20N120B3 C90 V 3.1V CE(sat) High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE TO-220 (IXGP) V Continuous 20 V GES V Transient 30 V GEM I T = 25C36 A C25 C I T = 90C20 A C90 C C (TAB) G I T = 25C, 1ms 80 A C CM C E SSOA V = 15V, T = 125C, R = 15 I = 40 A GE J G CM (RBSOA) Clamped Inductive load V 1200 V CE G = Gate C = Collector P T = 25C 180 W E = Emitter TAB = Collector C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C z Optimized for Low Conduction and T Maximum Lead Temperature for Soldering 300 C Switching Losses L z T 1.6mm (0.062 in.) from Case for 10s 260 C Square RBSOA SOLD z International Standard Packages Weight TO-263 2.5 g TO-220 3.0 g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Power Inverters J z UPS BV I = 250A, V = 0V 1200 V CES C GE z Motor Drives V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE z SMPS I V = V ,V = 0V 25 A z CES CE CES GE PFC Circuits T = 125C 1 mA z J Welding Machines z I V = 0V, V = 20V 100 nA Inductive Heating GES CE GE V I = 16A, V = 15V, Note 2 2.7 3.1 V CE(sat) C GE T = 125C 2.8 V J 2009 IXYS CORPORATION, All Rights Reserved DS100126(03/09)IXGA20N120B3 IXGP20N120B3 Symbol Test Conditions Characteristic Values TO-263 (IXGA) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 16A, V = 10V, Note 2 7.5 12.5 S fs C CE C 1070 pF ies C V = 25V, V = 0V, f = 1MHz 80 pF oes CE GE C 32 pF res Q 51 nC g Q I = 16A, V = 15V, V = 0.5 V 7.4 nC ge C GE CE CES Q 23 nC gc t 16 ns d(on) Inductive load, T = 25C t 31 ns J ri I = 16A, V = 15V E 0.92 mJ C GE on t V = 600V, R = 15 150 ns d(off) CE G Note 1 t 155 ns fi E 0.56 1.00 mJ off t 16 ns d(on) Inductive load, T = 125C J t 45 ns ri I = 16A, V = 15V E C GE 1.60 mJ on V = 600V, R = 15 t CE G 180 ns d(off) Note 1 t 540 ns fi E 1.63 mJ off R 0.69 C/W thJC R TO-220 0.50 C/W thCK TO-220 (IXGP) Outline Notes: 1. Switching Times may Increase for V (Clamp) > 0.5 V , CE CES Higher T or Increased R . J G 2. Pulse Test, t 300s Duty Cycle, d 2%. Pins: 1 - Gate 2 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537