Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGH30N120C3H1 CES I = 24A C100 V 4.2V CE(sat) High speed PT IGBTs for t = 42ns fi(typ) 10-50kHz Switching Symbol Test Conditions Maximum Ratings TO-247AD V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G I T = 25C 48 A TAB C25 C C I T = 100C 24 A E C100 C I T = 25C, 1ms 115 A CM C I T = 25C 20 A A C E T = 25C 250 mJ AS C G = Gate C = Collector SSOA V = 15V, T = 125C, R = 5 I = 60 A GE J G CM E = Emitter TAB = Collector (RBSOA) Clamped Inductive Load V 1200 V CE P T = 25C 250 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z Optimized for Low Conduction and M Mounting Torque 1.13/10 Nm/lb.in. d Switching Losses T Maximum Lead Temperature for Soldering 300 C L z Square RBSOA T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD z Anti-Parallel Ultra Fast Diode z Weight 6 g Avalanche Rated z International Standard Package Advantages z High Power Density Symbol Test Conditions Characteristic Values z Low Gate Drive Requirement (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z AC Motor Speed Control I V = V V = 0V 100 A CES CE CES GE z DC Servo and Robot Drives T = 125C 1.5 mA J z DC Choppers I V = 0V, V = 20V 100 nA GES CE GE z Uninterruptible Power Supplies (UPS) V I = 24A, V = 15V, Note 2 3.6 4.2 V z CE(sat) C GE Switch-Mode and Resonant-Mode T = 125C 3.2 V Power Supplies J 2009 IXYS CORPORATION, All rights reserved DS100123(03/09) IXGH30N120C3H1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) AD Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 2 10 17 S fs C CE C 1810 pF ies C V = 25V, V = 0V, f = 1MHz 185 pF oes CE GE C 50 pF res Q 80 nC g Q I = 24A, V = 15V, V = 0.5 V 11 nC ge C GE CE CES Q 37 nC gc t 18 ns d(on) Inductive Load, T = 25C t 33 ns J ri I = 24A, V = 15V E 1.45 mJ C GE on t V = 600V, R = 5 106 ns 1 = Gate d(off) CE G 2 = Collector Note 1 t 42 ns fi 3 = Emitter Tab = Collector E 0.47 0.85 mJ off t 20 ns d(on) Inductive Load, T = 125C J t 40 ns ri I = 24A, V = 15V E C GE 2.50 mJ on V = 600V, R = 5 t 135 ns CE G d(off) Note 1 t 280 ns fi E 1.30 2.10 mJ off R 0.50 C/W thJC R 0.21 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V 3.0 V F F GE T = 125C 2.8 V J I I = 20A, -di /dt = 750A/s, V = 800V 19 A RM F F R t V = 0V 70 ns rr GE R 0.9 C/W thJC Notes: 1. Switching Times May Increase for V (Clamp) > 0.5 V , CE CES Higher T or Increased R . J G 2. Pulse Test, t 300 s Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537