Preliminary Technical Information TM IXGH64N60A3 V = 600V GenX3 600V IGBT CES IXGT64N60A3 I = 64A C110 Ultra-lowVsat PT IGBTs for up to V 1.35V CE(sat) 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C (TAB) C I T = 110C 64 A E C110 C I T = 25C, 1ms 400 A CM C SSOA V = 15V, T = 125C, R = 3 I = 100 A TO-268 (IXGT) GE VJ G CM (RBSOA) Clamped inductive load 600V P T = 25C 460 W C C G E T -55 ... +150 C J T 150 C C (TAB) JM T -55 ... +150 C stg G = Gate C = Collector T 1.6mm (0.062 in.) from case for 10s 300 C E = Emitter TAB = Collector L T Plastic body for 10 seconds 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d Features Weight TO-247 6 g TO-268 5 g z Optimized for low conduction losses z Square RBSOA z International standard packages Advantages z High power density z Low gate drive requirement Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 600 V CES C GE z Power Inverters z V I = 250A, V = V 3.0 5.0 V UPS GE(th) C CE GE z Motor Drives I V = V 50 A CES CE CES z SMPS z V = 0V T = 125C 500 A GE J PFC Circuits z Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE z Welding Machines z V I = 50A, V = 15V, Note 1 1.20 1.35 V Lamp Ballasts CE(sat) C GE z Inrush Current Protection Circuits 2008 IXYS CORPORATION, All rights reserved DS100003(06/08) IXGH64N60A3 IXGT64N60A3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 40 70 S fS C CE C 4850 pF ies P C V = 25V, V = 0V, f = 1MHz 270 pF 1 2 3 oes CE GE C 66 pF res Q 167 nC g Q I = 50A, V = 15V, V = 0.5 V 28 nC ge C GE CE CES Q 60 nC gc e t 26 ns d(on) Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain t 40 ns Inductive load, T = 25C ri J Dim. Millimeter Inches E 1.42 mJ Min. Max. Min. Max. on I = 50A, V = 15V C GE A 4.7 5.3 .185 .209 t 268 ns d(off) V = 480V, R = 3 A 2.2 2.54 .087 .102 CE G 1 t 222 ns A 2.2 2.6 .059 .098 2 fi b 1.0 1.4 .040 .055 E 3.28 mJ off b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 t 25 ns d(on) C .4 .8 .016 .031 t 40 ns D 20.80 21.46 .819 .845 ri Inductive load, T = 125C J E 15.75 16.26 .610 .640 E 2.76 mJ on e 5.20 5.72 0.205 0.225 I = 50A, V = 15V C GE L 19.81 20.32 .780 .800 t 415 ns d(off) L1 4.50 .177 V = 480V, R = 3 CE G t 362 ns P 3.55 3.65 .140 .144 fi Q 5.89 6.40 0.232 0.252 E 6.00 mJ off R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC R 0.27 C/W thJC R 0.25 C/W thCS TO-268 (IXGT) Outline Note 1: Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537