X-On Electronics has gained recognition as a prominent supplier of IXGK72N60B3H1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. IXGK72N60B3H1 IGBT Modules are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

IXGK72N60B3H1 IXYS

IXGK72N60B3H1 electronic component of IXYS
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Part No.IXGK72N60B3H1
Manufacturer: IXYS
Category: IGBT Modules
Description: IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode
Datasheet: IXGK72N60B3H1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 20.8282 ea
Line Total: USD 520.7 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 25
Multiples : 25
25 : USD 37.7728

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 25
Multiples : 25
25 : USD 20.8282
50 : USD 19.2854
75 : USD 19.2854
125 : USD 19.2854
250 : USD 19.2854

0
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 20.4434
3 : USD 19.3267

   
Manufacturer
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
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Pd - Power Dissipation
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We are delighted to provide the IXGK72N60B3H1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGK72N60B3H1 and other electronic components in the IGBT Modules category and beyond.

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TM V = 600V GenX3 600V IGBTs IXGK72N60B3H1 CES I = 72A w/ Diode IXGX72N60B3H1 C110 V 1.8V CE(sat) t = 92ns Medium Speed Low Vsat PT fi(typ) IGBTs 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V CES J G C V T = 25 C to 150 C, R = 1M 600 V CGR J GE E Tab V Continuous 20 V GES V Transient 30 V PLUS247 (IXGX) GEM I T = 25 C (Limited by Leads) 75 A C25 C I T = 110 C72A C110 C I T = 25 C, 1ms 450 A CM C G G SSOA V = 15V, T = 125C, R = 3 I = 240 A GE VJ G CM C Tab E (RBSOA) Clamped Inductive Load V V CE CES P T = 25 C 540 W C C G = Gate E = Emitter C = Collector Tab = Collector T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Optimized for Low Conduction and F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Switching Losses C Square RBSOA Weight TO-264 10 g Anti-Parallel Ultra Fast Diode PLUS247 6 g Advantages High Power Density Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = V , V = 0V 300 A CES CE CES GE Power Inverters T = 150C 5 mA J UPS I V = 0V, V = 20V 100 nA GES CE GE Motor Drives V I = 60A, V = 15V, Note 1 1.50 1.80 V SMPS CE(sat) C GE I = 120A 1.75 V PFC Circuits C Battery Chargers Welding Machines Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS99869B(7/13)IXGK72N60B3H1 IXGX72N60B3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 45 76 S fs C CE C 6800 pF ies C V = 25V, V = 0V, f = 1MHz 575 pF oes CE GE C 80 pF res Q 225 nC g(on) Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES Q 82 nC gc PINS: 1 - Gate 2,4 - Collector t 31 ns d(on) 3 - Emitter Inductive load, T = 25C t J 33 ns ri I = 50A, V = 15V C GE E 1.4 mJ on V = 480V, R = 3 CE G t 152 240 ns d(off) Note 2 t 92 150 ns fi E 1.0 2.0 mJ off t 29 ns d(on) Inductive load, T = 125C t J 34 ns ri I = 50A, V = 15V E C GE 2.7 mJ on V = 480V, R = 3 t 228 ns CE G d(off) t 142 ns Note 2 fi E 2.2 mJ off R 0.23 C/W thJC R 0.15 C/W TM thCS PLUS247 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Oherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.3 V F F GE T = 150C 1.4 1.8 V J PINS: 1 - Gate I = 60A, V = 0V, T = 100C I F 8.3GE J A 2 - Collector RM 3 - Emitter -di /dt = 200A/ sV = 300V F R t 140 ns rr R 0.30 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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