Advance Technical Information TM GenX3 1200V V = 1200V IXGN50N120C3H1 CES I = 50A IGBT w/ Diode C110 V 4.2V CE(sat) High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 150C 1200 V CES J G V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E c I T = 25C 95 A C25 C C I T = 110C 50 A C110 C I T = 110C 58 A G = Gate, C = Collector, E = Emitter F110 C c either emitter terminal can be used as I T = 25C, 1ms 240 A CM C Main or Kelvin Emitter SSOA V = 15V, T = 125C, R = 2 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 460 W C C Features T -55 ... +150 C J z T 150 C Optimized for Low Switching Losses JM z Square RBSOA T -55 ... +150 C stg z High Current Capability V 50/60Hz t = 1min 2500 V~ z ISOL Isolation Voltage 2500V~ I 1mA t = 1s 3000 V~ z ISOL Anti-Parallel Ultra Fast Diode z M Mounting Torque 1.5/13 Nm/lb.in. International Standard Package d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages z High Power Density z Low Gate Drive Requirement Applications z Symbol Test Conditions Characteristic Values Power Inverters z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. UPS J z SMPS V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z PFC Circuits I V = V , V = 0V 250 A CES CE CES GE z Welding Machines T = 125C 14 mA z J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 4.2 V CE(sat) C GE T = 125C 2.6 V J 2010 IXYS CORPORATION, All Rights Reserved DS100246(03/10)IXGN50N120C3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXGN) (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 24 40 S fs C CE C 4250 pF ies C V = 25V, V = 0V, f = 1MHz 455 pF oes CE GE C 120 pF res Q 196 nC g Q I = 50A, V = 15V, V = 0.5 V 24 nC ge C GE CE CES Q 84 nC gc t 31 ns d(on) t Inductive load, T = 25C 36 ns ri J E I = 40A, V = 15V 2.0 mJ on C GE t 123 ns V = 0.5 V , R = 2 d(off) CE CES G t Note 2 64 ns fi E 0.63 1.2 mJ off t 23 ns d(on) Inductive load, T = 125C t J 37 ns ri E 3.0 mJ I = 40A, V = 15V on C GE t 170 ns V = 0.5 V , R = 2 d(off) CE CES G t 315 ns Note 2 fi E 2.1 mJ off R 0.27 C/W thJC R 0.05 C/W thCK Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 50A, V = 0V, Note 1 2.1 2.4 V F F GE T = 125C 2.3 V J I 50 A RM I = 50A, V = 0V, F GE -di /dt = 2500A/s, V = 800V t 75 ns F R rr R 0.30 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537