Advance Technical Information
TM
GenX3 1200V V = 1200V
IXGN82N120B3H1
CES
I = 64A
IGBT w/ Diode
C110
V 3.2V
CE(sat)
High-Speed Low-Vsat PT IGBT
for 3-20 kHz Switching
SOT-227B, miniBLOC
E153432
Symbol Test Conditions Maximum Ratings
E c
V T = 25C to 150C 1200 V
G
CES J
V T = 25C to 150C, R = 1M 1200 V
CGR J GE
V Continuous 20 V
GES
V Transient 30 V
GEM E c
C
I T = 25C (Chip Capability) 145 A
C25 C
I T = 110C 64 A
C110 C
G = Gate, C = Collector, E = Emitter
I T = 110C 42 A
F110 C
c either emitter terminal can be used as
I T = 25C, 1ms 550 A
Main or Kelvin Emitter
CM C
I T = 25C41A
A C
E T = 25C 750 mJ
AS C
SSOA V = 15V, T = 125C, R = 2 I = 164 A
GE VJ G CM Features
(RBSOA) Clamped Inductive Load @V V
CE CES
z
Optimized for Low Conduction and
P T = 25C 595 W
C C
Switching Losses
T -55 ... +150 C z
J Square RBSOA
z
T 150 C High Current Capability
JM
z
Isolation Voltage 2500V~
T -55 ... +150 C
stg
z
Anti-Parallel Ultra Fast Diode
V 50/60Hz t = 1min 2500 V~
z
ISOL
International Standard Package
I 1mA t = 1s 3000 V~
ISOL
M Mounting Torque 1.5/13 Nm/lb.in.
d
Advantages
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
z
High Power Density
z
Low Gate Drive Requirement
Symbol Test Conditions Characteristic Values
Applications
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
V I = 1mA, V = V 3.0 5.0 V
z
GE(th) C CE GE
Power Inverters
z
I V = V , V = 0V 50 A UPS
CES CE CES GE
z
Note 1, T = 125C 6 mA SMPS
J
z
PFC Circuits
I V = 0V, V = 20V 200 nA
GES CE GE
z
Welding Machines
V I = 82A, V = 15V, Note 2 2.7 3.2 V
z
CE(sat) C GE
Lamp Ballasts
2009 IXYS CORPORATION, All Rights Reserved DS100154(05/09)IXGN82N120B3H1
Symbol Test Conditions Characteristic Values
SOT-227B miniBLOC (IXGN)
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
g I = 60A, V = 10V, Note 2 35 60 S
fs C CE
C 7900 pF
ies
C V = 25V, V = 0V, f = 1 MHz 640 pF
oes CE GE
C 170 pF
res
Q 350 nC
g(on)
Q I = 82A, V = 15V, V = 0.5 V 50 nC
ge C GE CE CES
Q 150 nC
gc
t 30 ns
d(on)
Inductive load, T = 25C
J
t 77 ns
ri
I = 80A, V = 15V
E 5.0 mJ
C GE
on
V = 600V, R = 2
t 210 ns
CE G
d(off)
t 100 Note 3 ns
fi
E 3.3 6.2 mJ
off
t 32 ns
d(on)
Inductive load, T = 125C
t J 80 ns
ri
I = 80A, V = 15V
E 6.8 mJ
C GE
on
V = 600V, R = 2
t 240 ns
CE G
d(off)
t 520 Note 3 ns
fi
E 7.1 mJ
off
R 0.21 C/W
thJC
R 0.05 C/W
thCK
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified) Min. Typ. Max.
J
V I = 60A, V = 0V, Note 2 1.85 2.5 V
F F GE
T = 150C 1.90 V
J
t 200 ns
rr
I = 60A, V = 0V,
F GE
-di /dt = 350A/s, V = 600V, T = 100C
I 24.6 A
F R J
RM
R 0.42 C/W
thJC
Notes:
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t 300 s, duty cycle, d 2%.
3. Switching times & energy losses may increase for higher V (Clamp), T or R .
CE J G
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537