TM GenX3 600V IGBT V = 600V IXGR72N60A3H1 CES w/Diode I = 52A C110 V 1.45V CE(sat) (Electrically Isolated Tab) t = 250ns fi(typ) Ultra-Low Vsat PT IGBT for up to 5kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V CES J V T = 25 C to 150 C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Isolated Tab E V Transient 30 V GEM I T = 25 C75A C25 C G = Gate C = Collector I T = 110 C52A C110 C E = Emitter I T = 110 C32A F110 C I T = 25 C, 1ms 400 A CM C SSOA V = 15V, T = 125C, R = 3 I = 150 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES P T = 25 C 200 W C C Silicon Chip on Direct-Copper Bond (DCB) Substrate T -55 ... +150 C J Isolated Mounting Surface T 150 C JM 2500V Electrical Isolation T -55 ... +150 C stg Optimized for Low Conduction Losses Square RBSOA V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Anti-Parallel Ultra Fast Diode F Mounting Force 20..120/4.5..27 N/lb C International Standard Package T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD High Power Density Weight 5 g Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J SMPS V I = 250A, V = V 3.0 5.0 V PFC Circuits GE(th) C CE GE Battery Chargers I V = V , V = 0V 300 A CES CE CES GE Welding Machines T = 125C 5 mA J Lamp Ballasts I V = 0V, V = 20V 100 nA Inrush Current Protection Circuits GES CE GE V I = 60A, V = 15V, Note 1 1.45 V CE(sat) C GE 2014 IXYS CORPORATION, All Rights Reserved DS100143B(01/14)IXGR72N60A3H1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXGR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 75 S fs C CE C 6600 pF ies C V = 25V, V = 0V, f = 1MHz 360 pF oes CE GE C 80 pF res Q 230 nC g Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES Q 80 nC gc t 31 ns d(on) t Inductive load, T = 25C 34 ns ri J 1 - Gate E 1.4 mJ on I = 50A, V = 15V C GE 2 - Collector t 320 ns d(off) 3 - Emitter V = 480V, R = 3 CE G t 250 ns fi E 3.5 mJ off t 29 ns d(on) Inductive load, T = 125C t 34 ns J ri E 2.6 mJ on I = 50A, V = 15V C GE t 510 ns d(off) V = 480V, R = 3 CE G t 375 ns fi E 6.5 mJ off R 0.62 C/W thJC R 0.15 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. V I = 60A, V = 0V, Note 1 1.6 2.3 V F F GE T = 150C 1.4 1.8 V J I I = 60A, V = 0V, T = 100C 8.3 A RM F GE J -di /dt = 200A/s, V = 300V F R t I = 60A, -di/dt = 200A/s, V = 300V, T = 100C 140 ns rr F R J R 0.8 C/W thJC Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537