TM IXGH72N60A3 V = 600V GenX3 600V IGBT CES IXGT72N60A3 I = 72A C110 Ultra Low Vsat PT IGBT for V 1.35V up to 5kHz switching CE(sat) t = 250ns fi(typ) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V G GEM C C (TAB) E I T = 25C (limited by leads) 75 A C25 C I T = 110C 72 A C110 C TO-268 (IXGT) I T = 25C, 1ms 400 A CM C SSOA V = 15V, T = 125C, R = 3 I = 150 A GE VJ G CM (RBSOA) Clamped inductive load 600V G P T = 25C 540 W E C C C (TAB) T -55 ... +150 C J T 150 C G = Gate C = Collector JM E = Emitter TAB = Collector T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C Features SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d z Optimized for low conduction losses z Weight TO-247 6 g Square RBSOA z TO-268 4 g International standard packages Advantages z High power density z Low gate drive requirement Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25C unless otherwise specified) Min. Typ. Max. J z UPS z BV I = 250A, V = 0V 600 V Motor Drives CES C GE z SMPS V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE z PFC Circuits I V = V 75 A z CES CE CES Battery Chargers V = 0V T = 125C 750 A z GE J Welding Machines z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE z Inrush Current Protection Circuits V I = 60A, V = 15V, Note 1 1.35 V CE(sat) C GE 2008 IXYS CORPORATION, All rights reserved DS99759B(07/08) IXGH72N60A3 IXGT72N60A3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 76 S fs C CE C 6600 pF ies C V = 25V, V = 0V, f = 1MHz 360 pF oes CE GE 1 2 3 C 80 pF res Q 230 nC g Q I = I , V = 15V, V = 0.5 V 40 nC ge C C110 GE CE CES Q 78 nC gc Terminals: 1 - Gate 2 - Drain t 31 ns d(on) Dim. Millimeter Inches t 34 ns ri Min. Max. Min. Max. Inductive load, T = 25C J A 4.7 5.3 .185 .209 E 1.38 mJ on I = 50A, V = 15V A 2.2 2.54 .087 .102 C GE 1 t 320 ns A 2.2 2.6 .059 .098 d(off) 2 V = 480V, R = 3 CE G b 1.0 1.4 .040 .055 t 250 ns fi b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 E 3.5 mJ 2 off C .4 .8 .016 .031 D 20.80 21.46 .819 .845 t 29 ns d(on) E 15.75 16.26 .610 .640 t 32 ns Inductive load, T = 125C ri e 5.20 5.72 0.205 0.225 J L 19.81 20.32 .780 .800 E 2.6 mJ on I = 50A, V = 15V L1 4.50 .177 C GE t 510 ns P 3.55 3.65 .140 .144 d(off) V = 480V, R = 3 CE G Q 5.89 6.40 0.232 0.252 t 375 ns fi R 4.32 5.49 .170 .216 E 6.5 mJ off R 0.23 C/W thJC TO-268 Outline R 0.15 C/W thCS Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537