TM TM V = 650V XPT 650V GenX4 IXXN110N65C4H1 CES I = 110A w/ Sonic Diode C110 V 2.35V CE(sat) t = 35ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES E V Transient 30 V GEM C I T = 25C (Chip Capability) 210 A C25 C I Terminal Current Limit 200 A G = Gate, C = Collector, E = Emitter C25 either emitter terminal can be used as I T = 110C 110 A C110 C Main or Kelvin Emitter I T = 110C 70 A F110 C I T = 25C, 1ms 670 A CM C Features SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES International Standard Package t V = 15V, V = 360V, T = 150C 10 s miniBLOC, with Aluminium Nitride sc GE CE J Isolation (SCSOA) R = 82, Non Repetitive G 2500V~ Isolation Voltage P T = 25C 750 W C C Anti-Parallel Sonic Diode Optimized for 20-60kHz Switching T -55 ... +175 C J Square RBSOA T 175 C JM Short Circuit Capability T -55 ... +175 C stg High Current Handling Capability V 50/60Hz t = 1min 2500 V~ ISOL I 1mA t = 1s 3000 V~ ISOL Advantages M Mounting Torque 1.5/13 Nm/lb.in d Terminal Connection Torque 1.3/11.5 Nm/lb.in High Power Density Weight 30 g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. UPS J Motor Drives BV I = 250 A, V = 0V 650 V CES C GE SMPS V I = 4mA, V = V 4.0 6.5 V PFC Circuits GE(th) C CE GE Battery Chargers I V = V , V = 0V 50 A CES CE CES GE Welding Machines T = 150C 3 mA Lamp Ballasts J High Frequency Power Inverters I V = 0V, V = 20V 100 nA GES CE GE V I = 110A, V = 15V, Note 1 2.06 2.35 V CE(sat) C GE T = 150C 2.50 V J 2016 IXYS CORPORATION, All Rights Reserved DS100506D(9/16)IXXN110N65C4H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXXN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 440 pF oes CE GE C 80 pF res Q 167 nC g(on) Q I = 110A, V = 15V, V = 0.5 V 44 nC ge C GE CE CES Q 63 nC gc t 30 ns d(on) Inductive load, T = 25C t 45 ns J ri I = 55A, V = 15V E 2.50 mJ C GE on V = 400V, R = 2 t 110 ns CE G d(off) t 35 ns Note 2 fi E 0.63 1.05 mJ off t 26 ns d(on) Inductive load, T = 150C t 45 ns J ri I = 55A, V = 15V E 3.55 mJ C GE on V = 400V, R = 2 t 120 ns CE G d(off) t Note 2 40 ns fi E 0.90 mJ off R 0.20 C/W thJC R 0.05 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 1.7 2.3 V F F GE T = 150C 1.8 V J I 95 A I = 100A, V = 0V, T = 150C RM F GE J t -di /dt = 1500A/sV = 300V 100 ns rr F R R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537