Preliminary Technical Information TM V = 600V XPT 600V IGBT IXXN200N60C3H1 CES TM I = 98A GenX3 w/ Sonic C110 V 2.1V Diode CE(sat) t = 80ns fi(typ) Extreme Light Punch Through E IGBT for 20-60kHz Switching SOT-227B E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 150C 600 V G CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E c I T = 25C (Chip Capability) 200 A C25 C C I T = 110C 98 A C110 C I T = 110C 30 A G = Gate, C = Collector, E = Emitter F110 C c either emitter terminal can be used as I T = 25C, 1ms 1000 A CM C Main or Kelvin Emitter I T = 25C 100 A A C E T = 25C 1 J AS C Features SSOA V = 15V, T = 150C, R = 1 I = 400 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES z Silicon Chip on Direct-Copper Bond t V = 15V, V = 360V, T = 150C 10 s (DCB) Substrate sc GE CE J z miniBLOC, with Aluminium Nitride (SCSOA) R = 10, Non Repetitive G Isolation P T = 25C 780 W z C C Optimized for Low Switching Losses z Isolated Mounting Surface T -55 ... +150 C J z Anti-Parallel Sonic Diode T 150 C JM z 2500V~ Electrical Isolation T -55 ... +150 C stg z Optimized for 20-60kHz Switching z V 50/60Hz t = 1min 2500 V~ Avalanche Rated ISOL z I 1mA t = 1s 3000 V~ Short Circuit Capability ISOL z Very High Current Capability M Mounting Torque 1.5/13 Nm/lb.in. z d Square RBSOA Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 600 V CES C GE z V I = 250A, V = V 3.5 6.0 V Power Inverters GE(th) C CE GE z UPS I V = V , V = 0V 50 A CES CE CES GE z Motor Drives Note 1, T = 125C 3 mA z J SMPS z PFC Circuits I V = 0V, V = 20V 200 nA GES CE GE z Battery Chargers V I = 100A, V = 15V, Note 1 1.60 2.10 V z CE(sat) C GE Welding Machines T = 150C 1.93 V z Lamp Ballasts J 2013 IXYS CORPORATION, All Rights Reserved DS100511A(02/13)IXXN200N60C3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXXN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 20 35 S C CE fs C 9900 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 185 pF res Q 315 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 134 nC ge C GE CE CES Q 98 nC gc t 47 ns d(on) Inductive load, T = 25C t 100 ns J ri I = 100A, V = 15V E 3.0 mJ C GE on V = 360V, R = 1 t 125 ns CE G d(off) t 80 ns Note 2 fi E 1.7 2.6 mJ off t 47 ns d(on) Inductive load, T = 150C t 96 ns J ri I = 100A, V = 15V E 4.0 mJ C GE on V = 360V, R = 1 t 150 ns CE G d(off) t 90 ns Note 2 fi E 2.1 mJ off R 0.16 C/W thJC R 0.05 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.3 V J I 95 A I = 100A, V = 0V, T = 150C RM F GE J t -di /dt = 1500A/s, V = 300V 100 ns rr F R R 0.70 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537