MDI100-12A3 IXYS

MDI100-12A3 V= 1200V CES IGBT (NPT) Module I= 135A C25 VV= 2.2 CE(sat) Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 NPT IGBT technology AC motor drives Isolation Voltage: V~ 3600 low saturation voltage Solar inverter Industry standard outline low switching losses Medical equipment RoHS compliant switching frequency up to 30 kHz Uninterruptible power supply Soldering pins for PCB mounting square RBSOA, no latch up Air-conditioning systems Base plate: DCB ceramic high short circuit capability Welding equipment Reduced weight positive temperature coefficient for Switched-mode and resonant-mode Advanced power cycling easy parallelling power supplies MOS input, voltage controlled Inductive heating, cookers ultra fast free wheeling diodes Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reservedMDI100-12A3 Ratings Free Wheeling Diode FWD Conditions Symbol Definition min. typ. max. Unit V T = 25C 1200 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 1200 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V1200 T = 25C 1 mA R R VJ V = V1200 T = C125 3 mA R VJ forward voltage drop V I = A75 T = 25C 2.50 V F F VJ 2.90 V I = A150 F I = A75 T = C125 1.80 V F VJ I = A150 2.10 V F average forward current T = C80 T = C150 75 A I FAV C VJ DC current d = 1 V threshold voltage T = C150 1.30 V F0 VJ for power loss calculation only slope resistance r 7.5 m F thermal resistance junction to case R 0.45 K/W thJC thermal resistance case to heatsink R 0.45 K/W thCH P total power dissipation T = 25C 280 W tot C max. forward surge current I t = 10 ms (50 Hz), sine V = 0 V T = 45C 700 A R FSM VJ junction capacitance C V = V600 f = 1 MHz T = 25C 48 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a 2013 IXYS all rights reserved