MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 I = 180 A IGBT Modules C25 V = 1200 V CES V = 2.2 V Short Circuit SOA Capability CE(sat) typ. Square RBSOA 3 MII MID MDI 2 11 3 3 3 1 10 9 8 8 8 1 1 1 9 9 11 11 2 2 2 10 10 E 72873 Features Symbol Conditions Maximum Ratings NPT IGBT technology low saturation voltage V T = 25 C to 150 C 1200 V CES J low switching losses V T = 25 C to 150 C R = 20 k 1200 V CGR J GE switching frequency up to 30 kHz V Continuous 20 V square RBSOA, no latch up GES high short circuit capability V Transient 30 V GEM positive temperature coefficient for I T = 25 C 180 A C25 C easy parallelling I T = 80 C 120 A MOS input, voltage controlled C80 C ultra fast free wheeling diodes I T = 80 C, t = 1 ms 240 A CM C p package with DCB ceramic base plate t V = 15 V, V = V , T = 125 C10 s SC GE CE CES J isolation voltage 4800 V (SCSOA) R = 10 , non repetitive G UL registered E72873 RBSOA V = 15 V, T = 125 C, R = 10 I = 200 A GE J G CM Clamped inductive load, L = 100 HV < V CEK CES Advantages P T = 25 C 760 W tot C space and weight savings T 150 C J reduced protection circuits T -40 ... +150 C stg V 50/60 Hz, RMS t = 1 min 4000 V~ ISOL Typical Applications I 1 mA t = 1 s 4800 V~ ISOL Insulating material: Al O AC and DC motor control 2 3 AC servo and robot drives M Mounting torque (module) 2.25-2.75 Nm d power supplies 20-25 lb.in. welding inverters (teminals) 2.5-3.7 Nm 22-33 lb.in. d Creepage distance on surface 10 mm S d Strike distance through air 9.6 mm A 2 a Max. allowable acceleration 50 m/s Weight Typical 250 g 8.8 oz. Data according to a single IGBT/FRED unless otherwise stated. 2000 IXYS All rights reserved 1 - 4 030MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394 ) (T = 25 C, unless otherwise specified) J min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 4 mA, V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25 C 7.5 mA CES CE CES J T = 125 C11 mA J I V = 0 V, V = 20 V 400 nA GES CE GE V I = 100 A, V = 15 V 2.2 2.7 V CE(sat) C GE C 6.6 nF ies C V = 25 V, V = 0 V, f = 1 MHz 1 nF oes CE GE C 0.44 nF res t 100 ns d(on) t 70 ns r Inductive load, T = 125 C J t 500 ns d(off) I = 100 A, V = 15 V C GE t 70 ns f V = 600 V, R = 10 CE G E 15 mJ on E 11.5 mJ off R 0.17 K/W thJC R with heatsink compound 0.33 K/W thJS Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J min. typ. max. V I = 100 A, V = 0 V, 2.3 2.5 V F F GE I = 100 A, V = 0 V, T = 125 C 1.8 1.9 V F GE J I T = 25 C 200 A F C T = 80 C 130 A C I I = 100 A, V = 0 V, -di /dt = 800 A/ s80 A RM F GE F t T = 125 C, V = 600 V 200 ns rr J R R 0.33 K/W thJC R with heatsink compound 0.66 K/W thJS 2000 IXYS All rights reserved 2 - 4