MIEB101H1200EH IXYS

MIEB 101H1200EH IGBT Module V = 1200 V CES I = 183 A C25 H Bridge V = 1.8 V CE(sat) Part name (Marking on product) MIEB101H1200EH 13, 21 D1 D2 T1 T2 1 9 2 10 19 E72873 15 D3 D4 T3 T4 11 3 4 12 14, 20 Features: Application: Package: + SPT IGBT technology AC motor drives E3-Pac standard outline low saturation voltage Solar inverter Insulated copper base plate low switching losses Medical equipment Soldering pins for PCB mounting square RBSOA, no latch up Uninterruptible power supply high short circuit capability Air-conditioning systems positive temperature coefficient Welding equipment for easy parallelling Switched-mode and MOS input, voltage controlled resonant-mode power supplies SONIC free wheeling diode - fast and soft reverse recovery - low operation forward voltage solderable pins for PCB mounting package with copper base plate IXYS reserves the right to change limits, test conditions and dimensions. 20110615a 2011 IXYS All rights reserved 1 - 8MIEB 101H1200EH Ouput Inverter T1 - T4 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 183 A C25 C I T = 80C 128 A C80 C total power dissipation P T = 25C 630 W tot C collector emitter saturation voltage V I = 100 A V = 15 V T = 25C 1.8 2.2 V CE(sat) C GE VJ (on chip level) T = 125C 2.0 2.4 V VJ gate emitter threshold voltage V I = 4 mA V = V T = 25C 5 6 7 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.3 mA CES CE CES GE VJ T = 125C 0.9 3 mA VJ gate emitter leakage current I V = 20 V 200 nA GES GE input capacitance C V = 25 V V = 0 V f = 1 MHz 7430 pF ies CE GE total gate charge Q V = 600 V V = 15 V I = 100 A 750 nC G(on) CE GE C turn-on delay time t 120 ns d(on) t current rise time 55 ns r inductive load T = 125C VJ t turn-off delay time 460 ns d(off) V = 600 V I = 100 A CE C current fall time t 240 ns f V = 15 V R = 10 W GE G turn-on energy per pulse E 9.5 mJ on L = 70 nH S turn-off energy per pulse E 9.7 mJ off E reverse recovery losses at turn-off 4.2 mJ rec(off) RBSOA reverse bias safe operating area V = 15 V R = 10 W T = 125C GE G VJ V = 1200 V 200 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 10 V T = 125C 10 s SC CE GE VJ short circuit current R = 3.9 W non-repetitive G thermal resistance junction to case R (per IGBT) 0.2 K/W thJC Output Inverter D1 - D4 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 135 A F25 C I T = 80C 90 A F80 C forward voltage V I = 100 A V = 0 V T = 25C 2.00 2.20 V F F GE VJ (on chip level) T = 125C 1.95 2.25 V VJ max. reverse recovery current I inductive load 120 A rr reverse recovery time t V = 600 V I = 100 A 330 ns rr CE C Q V = 15 V R = 10 W T = 125C 12.5 C rr GE G VJ E L = 70 nH 4.2 mJ rec S thermal resistance junction to case R (per diode) 0.4 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110615a 2011 IXYS All rights reserved 2 - 8