MIXA10WB1200TML IXYS

MIXA10WB1200TML Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 100 A I = 17 A I = 17 A DAVM25 C25 C25 XPT IGBT I = 320 A V = 1.8 V V = 1.8 V FSM CE(sat) CE(sat) Preliminary data Part name (Marking on product) MIXA10WB1200TML E72873 Pin configuration see outlines. Features: Application: Package: High level of integration - only one AC motor drives DCB basedE1-Pac power semiconductor module required Pumps, Fans Assembly height is 17 mm for the whole drive Washing machines Insulated base plate Rugged XPT design Air-conditioning system UL registered E72873 (Xtreme light Punch Through) results in: Inverter and power supplies - short circuit rated for 10 sec. - very low gate charge - square RBSOA 3x I C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) Temperature sense included SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110916c 2011 IXYS All rights reserved 1 - 7MIXA10WB1200TML Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 17 A C25 C I T = 80C 12 A C80 C total power dissipation P T = 25C 63 W tot C collector emitter saturation voltage V I = 9 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 0.3 mA V = V T = 25C 5.5 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.02 0.1 mA CES CE CES GE VJ T = 125C 0.2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 10 A 27 nC G(on) CE GE C turn-on delay time t 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ t turn-off delay time 250 ns d(off) V = 600 V I = 10 A CE C current fall time t 100 ns f V = 15 V R = 100 W GE G turn-on energy per pulse E 1.1 mJ on turn-off energy per pulse E 1.1 mJ off reverse bias safe operating area RBSOA V = 15 V R = 100 W V = 1200 V 30 A GE G CEK T = 125C VJ I short circuit safe operating area V = 900 V V = 15 V T = 125C 40 A SC CE GE VJ (SCSOA) R = 100 W t = 10 s non-repetitive G p thermal resistance junction to case R (per IGBT) 2.0 K/W thJC thermal resistance case to heatsink R 0.7 K/W thCH Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit V max. repetitve reverse voltage T = 25C 1200 V RRM VJ I forward current T = 25C 19 A F25 C I T = 80C 13 A F80 C forward voltage V I = 10 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.85 V VJ reverse recovery charge Q tbd C rr V = 600 V R max. reverse recovery current I tbd A RM di /dt = -250 A/s T = 125C F VJ reverse recovery time t tbd ns rr I = 10 A V = 0 V F GE E reverse recovery energy tbd mJ rec R thermal resistance junction to case (per diode) 2.4 K/W thJC thermal resistance case to heatsink R 0.8 K/W thCH IXYS reserves the right to change limits, test conditions and dimensions. 20110916c 2011 IXYS All rights reserved 2 - 7