MIXA150W1200TEH Six-Pack V = 1200 V CES I = 220 A C25 XPT IGBT V = 1.8 V CE(sat) Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 D3 D5 T1 T3 T5 5 9 1 19 6 10 2 27 24 21 28 25 22 NTC E72873 29 26 23 Pin configuration see outlines. D2 D4 D6 20 T2 T4 T6 3 7 11 4 8 12 33, 34, 35 13, 14, 15 Features: Application: Package: Easy paralleling due to the positive AC motor drives E3-Pac standard outline temperature coefficient of the on-state Solar inverter Insulated copper base plate voltage Medical equipment Soldering pins for PCB mounting Rugged XPT design Uninterruptible power supply Temperature sense included (Xtreme light Punch Through) results in: Air-conditioning systems Optimizes pin layout - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110510b 2011 IXYS All rights reserved 1 - 6MIXA150W1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 220 A C25 C I T = 80C 150 A C80 C total power dissipation P T = 25C 695 W tot C collector emitter saturation voltage V I = 150 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 6 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.05 0.5 mA CES CE CES GE VJ T = 125C 1.0 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 150 A 470 nC G(on) CE GE C turn-on delay time t 70 ns d(on) t current rise time 40 ns r t turn-off delay time inductive load T = 125C 250 ns d(off) VJ current fall time t V = 600 V I = 150 A 100 ns f CE C turn-on energy per pulse E V = 15 V R = 4.7 W 14 mJ on GE G turn-off energy per pulse E 16 mJ off E diode turn-off energy per pulse 10 mJ rec RBSOA reverse bias safe operating area V = 15 V R = 4.7 W T = 125C GE G VJ V = 1200 V 450 A CEK short circuit safe operating area SCSOA short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 4.7 W non-repetitive 600 A SC G thermal resistance junction to case R (per IGBT) 0.18 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 190 A F25 C I T = 80C 130 A F80 C forward voltage V I = 150 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 20 C rr V = 600 V R I max. reverse recovery current 175 A RM di /dt = -2500 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 150 A V = 0 V F GE reverse recovery energy E 10 mJ rec thermal resistance junction to case R (per diode) 0.28 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110510b 2011 IXYS All rights reserved 2 - 6