MIXA60HU1200VA IXYS

MIXA60HU1200VA preliminary V = 1200 V CES XPT IGBT Module I = 85 A C25 V = 1.8 V CE(sat) H~ Bridge, Buck / Boost - Combination Part number MIXA60HU1200VA Backside: isolated 10 6 4 5 8 3 1 2 9 7 Features / Advantages: Applications: Package: V1-A-Pack Easy paralleling due to the positive temperature Switched-mode power supplies Isolation Voltage: V~ 3600 coefficient of the on-state voltage Switched reluctance motor drive Industry standard outline Rugged XPT design (Xtreme light Punch Through) RoHS compliant results in: Soldering pins for PCB mounting - short circuit rated for 10 sec. Height: 17 mm - very low gate charge Base plate: DCB ceramic - low EMI Reduced weight - square RBSOA 3x Ic Advanced power cycling Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c 2020 IXYS all rights reservedMIXA60HU1200VA preliminary Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage T = 25C 1200 V V VJ CES max. DC gate voltage 20 V V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 85 A C C25 T = 8 0 C 60 A I C C80 total power dissipation T = 25C 290 W P tot C collector emitter saturation voltage V I = 5 5 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 1 2 5 C 2.1 V VJ gate emitter threshold voltage I = 2 mA V = V T = 25C 5.4 5.9 6.5 V V VJ GE(th) C GE CE collector emitter leakage current V = V V = 0 V T = 25C 0.5 mA I CES CE CES GE VJ T = 1 2 5 C 0.2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge V = 6 0 0 V V = 15 V I = 5 5 A 165 nC Q G(on) CE GE C turn-on delay time 70 ns t d(on) current rise time t 40 ns r inductive load T = 1 2 5 C VJ turn-off delay time t 250 ns d(off) V = 6 0 0 V I = 5 5 A CE C current fall time 100 ns t f V = 15 V R = 1 5 GE G turn-on energy per pulse 4.5 mJ E on turn-off energy per pulse E 5.5 mJ off reverse bias safe operating area RBSOA V = 15 V R = 1 5 T = 1 2 5 C GE G VJ A V = 1 2 0 0 V 150 I CM CEmax short circuit safe operating area V = 1 2 0 0 V SCSOA CEmax short circuit duration t V = 9 0 0 V V = 15 V T = 1 2 5 C 10 s SC CE GE VJ short circuit current I R = 1 5 non-repetitive 200 A SC G thermal resistance junction to case 0.5 K/W R thJC thermal resistance case to heatsink K/W R 0.30 thCH Diode max. repetitive reverse voltage T = 25C 1200 V V VJ RRM forward current T = 25C 88 A I C F25 I T = 8 0 C 59 A C F80 forward voltage V I = 6 0 A T = 25C 2.20 V VJ F F 125 1.95 V T = C VJ reverse current V = V T = 25C 0.3 mA I R R RRM VJ 125 T = C 1.2 mA VJ reverse recovery charge Q 8 C rr V = 600 V R max. reverse recovery current 60 A I RM -di /dt = 1 2 0 0 A/s T = C 125 F VJ reverse recovery time 350 ns t rr I = 6 0 A V = 0 V F GE reverse recovery energy E 2.5 mJ rec thermal resistance junction to case R 0.6 K/W thJC thermal resistance case to heatsink K/W R 0.2 thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200729c 2020 IXYS all rights reserved