MIXA60WB1200TEH IXYS

MIXA60WB1200TEH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 190 A I = 60 A I = 85 A DAVM C25 C25 XPT IGBT I = 700 A V = 1.8 V V = 1.8 V FSM CE(sat) CE(sat) Part name (Marking on product) MIXA60WB1200TEH 21 22 D7 D1 D3 D5 D11 D13 D15 16 18 20 T1 T3 T5 NTC 8 7 15 17 19 1 2 3 6 5 4 D6 D2 D12 D14 D16 D4 14 13 11 12 T7 T2 T4 T6 9 E 72873 10 23 24 Pin configuration see outlines. Features: Application: Package: Easy paralleling due to the positive AC motor drives E3-Pac standard outline temperature coefficient of the on-state Solar inverter Insulated copper base plate voltage Medical equipment Soldering pins for PCB mounting Rugged XPT design Uninterruptible power supply Temperature sense included (Xtreme light Punch Through) results in: Air-conditioning systems - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and - square RBSOA 3x I resonant-mode power supplies C - low EMI Thin wafer technology combined with the XPT design results in a competitive low V CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, test conditions and dimensions. 20110916e 2011 IXYS All rights reserved 1 - 8MIXA60WB1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES V max. transient collector gate voltage transient 30 V GEM I collector current T = 25C 85 A C25 C I T = 80C 60 A C80 C total power dissipation P T = 25C 290 W tot C collector emitter saturation voltage V I = 55 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ T = 125C 2.1 V VJ gate emitter threshold voltage V I = 2 mA V = V T = 25C 5.4 6.0 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 0.5 mA CES CE CES GE VJ T = 125C 0.2 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 600 V V = 15 V I = 50 A 165 nC G(on) CE GE C turn-on delay time t 70 ns d(on) t current rise time 40 ns r inductive load T = 125C VJ t turn-off delay time 250 ns d(off) V = 600 V I = 50 A CE C current fall time t 100 ns f V = 15 V R = 15 W GE G turn-on energy per pulse E 4.5 mJ on turn-off energy per pulse E 5.5 mJ off reverse bias safe operating area RBSOA V = 15 V R = 15 W T = 125C GE G VJ V = 1200 V 150 A CEK SCSOA short circuit safe operating area short circuit duration t V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ short circuit current I R = 15 W non-repetitive 200 A SC G thermal resistance junction to case R (per IGBT) 0.43 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 88 A F25 C I T = 80C 59 A F80 C V forward voltage I = 60 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 8 C rr V = 600 V R max. reverse recovery current I 60 A RM di /dt = -1200 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 60 A V = 0 V F GE E reverse recovery energy 2.5 mJ rec R thermal resistance junction to case (per diode) 0.6 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20110916e 2011 IXYS All rights reserved 2 - 8