MIXA60WH1200TEH preliminary 3~ Brake 3~ XPT IGBT Module Rectifier Chopper Inverter V = 1600 V V = 1200 V V =V1200 RRM CES CES I135 AI60 AI8=5 A = = C25 DAV C25 V 1.8 I = 700A V = 1.8 V = V TSM CE(sat) CE(sat) 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC Part number MIXA60WH1200TEH Backside: isolated 25 26 24 23 22 17 NTC 19 21 10 7 18 20 16 12 3 54 6 11 8 13 14 15 9 12 27 28 Features / Advantages: Applications: Package: Thyristor/Standard Rectifier for line frequency AC motor drives Housing: E3-Pack Easy paralleling due to the positive temperature Solar inverter International standard package coefficient of the on-state voltage Medical equipment RoHS compliant Rugged XPT design (Xtreme light Punch Through) Uninterruptible power supply Isolation voltage: 3600 V~ results in: Air-conditioning systems Advanced power cycling - short circuit rated for 10 sec. Welding equipment - very low gate charge Switched-mode and resonant-mode - low EMI power supplies - square RBSOA 3x Ic Inductive heating, cookers Thin wafer technology combined with the XPT design Pumps, Fans results in a competitive low VCE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b 2011 IXYS all rights reservedMIXA60WH1200TEH preliminary Ratings Rectifier Conditions Symbol Definition min. typ. max. Unit V T = 25C 1700 V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ V T = 25C 1600 V max. repetitive reverse/forward blocking voltage RRM/DRM VJ reverse current, drain current I V = V1600 T = 25C 100 A R/D R/D VJ V = V1600 T = C150 20 mA R/D VJ forward voltage drop V I = A80 T = 25C 1.43 V T T VJ 1.86 V I = A160 T I = A80 T = C125 1.42 V T VJ I = A160 1.97 V T bridge output current T = C80 T = C150 135 A I DAV C VJ 180 sine d = V threshold voltage T = C150 0.85 V T0 VJ for power loss calculation only slope resistance r 7.1 m T R 0.65 K/W thermal resistance junction to case thJC thermal resistance case to heatsink R K/W thCH 0.10 P total power dissipation T = 25C 190 W tot C max. forward surge current I t = 10 ms (50 Hz), sine T = 45C 700 A TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 755 A R t = 10 ms (50 Hz), sine T = C150 595 A VJ t = 8,3 ms (60 Hz), sine V = 0 V 645 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 2.45 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 2.37 kAs R t = 10 ms (50 Hz), sine T = C150 1.77 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.73 kAs R junction capacitance C V = V400 f = 1 MHz T = 25C 32 pF J R VJ P max. gate power dissipation t = 30 s T = C150 10 W GM P C t = 300 s 5 W P P 0.5 W average gate power dissipation GAV critical rate of rise of current (di/dt) T = 125C f = 50 Hz 150 A 100 repetitive, I = A/s cr VJ T t = 200 s di /dt=0.45 A/s P G IA=0.45 V = V non-repet., I = 45 A 500 A/s G D DRM T critical rate of rise of voltage (dv/dt) V = V T=125C 1000 V/s VJ cr D DRM R = method 1 (linear voltage rise) GK gate trigger voltage V V= 6 V T = 25 C 1.5 V GT D VJ T= -40C 1.6 V VJ gate trigger current I V= 6 V T = 25 C 78 mA VJ GT D T= -40C 200 mA VJ gate non-trigger voltage V V = V T= 125C 0.2 V GD D DRM VJ gate non-trigger current I 5mA GD latching current I t=200s T= 25C 450 mA VJ L p IA= 10 di /dt=0.45 A/s G G holding current I V= 6 V R = T= 25C 100 mA H D GK VJ gate controlled delay time t V = V T= 25C 2s gd D DRM VJ IA= 0.45 di /dt=0.45 A/s G G turn-off time t V = 100 V I =20 A V = V T= 150C 150 s q R T D DRM VJ di/dt = 10 A/s dv/dt = 15V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20111111b 2011 IXYS all rights reserved